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Krystian Michalczewski

Observed names: K Michalczewski, K. Michalczewski, Krystian MICHALCZEWSKI
ORCID: 0000-0002-4122-6554
Observed ORCID: 0000-0002-4122-6554
OpenAlex ID: A5010939447
Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate
2018 · K. Michalczewski, Ł. Kubiszyn, et al. · Infrared Physics & Technology · 33
Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates
2019 · K. Murawski, E. Gomółka, et al. · Progress in Natural Science Materials International · 29
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Application of localization landscape theory and the k · p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system
2020 · Tsung-Yin Tsai, Krystian Michalczewski, et al. · Journal of Applied Physics · 27
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
2016 · D. Benyahia, Ł. Kubiszyn, et al. · Optical and Quantum Electronics · 27
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Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy
2017 · D. Benyahia, Ł. Kubiszyn, et al. · Journal of Electronic Materials · 26
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The performance of the ICIP Ga-free superlattice longwave infrared photodetector for high operating temperature
2022 · Waldemar Gawron, Łukasz Kubiszyn, et al. · Infrared Physics & Technology · 25
Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate
2017 · D. Benyahia, Ł. Kubiszyn, et al. · Journal of Crystal Growth · 25
InAs/InAsSb Strain-Balanced Superlattices for Longwave Infrared Detectors
2019 · Tetiana Manyk, Krystian Michalczewski, et al. · Sensors · 24
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Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy
2016 · D. Benyahia, Ł. Kubiszyn, et al. · Opto-Electronics Review · 20
Demonstration of the Longwave Type-II Superlattice InAs/InAsSb Cascade Photodetector for High Operating Temperature
2022 · Waldemar Gawron, Lukasz Kubiszyn, et al. · IEEE Electron Device Letters · 19
Investigation of surface leakage current in MWIR HgCdTe and InAsSb barrier detectors
2018 · M Kopytko, E Gomółka, et al. · Semiconductor Science and Technology · 18
Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
2018 · D. Benyahia, Ł. Kubiszyn, et al. · Nanoscale Research Letters · 18
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Microwave Plasma Chemical Vapor Deposition of SbxOy/C negative electrodes and their compatibility with lithium and sodium Hückel salts—based, tailored electrolytes
2016 · A. Bitner-Michalska, K. Michalczewski, et al. · Electrochimica Acta · 18
Low-frequency noise measurements of IR photodetectors with voltage cross correlation system
2021 · Krzysztof Achtenberg, Janusz Mikołajczyk, et al. · Measurement · 17
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Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling
2019 · Krystian Michalczewski, Piotr Martyniuk, et al. · IEEE Electron Device Letters · 16
Demonstration of T2SLs InAs/InAsSb Based Interband Cascade Detector Supported by Immersion Lens for LWIR
2023 · Waldemar Gawron, Łukasz Kubiszyn, et al. · Journal of Electronic Materials · 15
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Comparison of type II superlattice InAs/InAsSb barrier detectors operating in the mid-wave infrared range
2024 · Małgorzata Kopytko, Paweł Madejczyk, et al. · Journal of Applied Physics · 12
Electrical and optical performance of midwave infrared InAsSb heterostructure detectors
2018 · Emilia Gomółka, Małgorzata Kopytko, et al. · Optical Engineering · 12
Response time of the type-II superlattice InAs/InAsSb mid-infrared interband cascade photodetector for HOT conditions
2024 · Karol Dąbrowski, Waldemar Gawron, et al. · Optics & Laser Technology · 11
II-VI versus III-V multistage detectors for LWIR and HOT conditions
2024 · Karol Dąbrowski, Łukasz Kubiszyn, et al. · Infrared Physics & Technology · 10
1/f Noise in InAs/InAsSb Superlattice Photoconductors
2020 · Lukasz Ciura, Andrzej Kolek, et al. · IEEE Transactions on Electron Devices · 10
Investigation on the InAs1–xSbxepilayers growth on GaAs (001) substrate by molecular beam epitaxy
2018 · D. Benyahia, Ł. Kubiszyn, et al. · Journal of Semiconductors · 10
A Thermoelectrically Cooled nBn Type‐II Superlattices InAs/InAsSb/B‐AlAsSb Mid‐Wave Infrared Detector
2020 · Piotr Martyniuk, Krystian Michalczewski, et al. · physica status solidi (a) · 9
Method of electron affinity evaluation for the type-2 InAs/InAs1−xSbx superlattice
2020 · Tetiana Manyk, Krzysztof Murawski, et al. · Journal of Materials Science · 9
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High operating temperature LWIR and VLWIR InAs1−xSbx optically immersed photodetectors grown on GaAs substrates
2018 · Ł. Kubiszyn, K. Michalczewski, et al. · Infrared Physics & Technology · 9
Works count: 72
Citation count: 597
H-index: 15
I10-index: 22
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