Author

Hanjun Cho

Observed name: Cho, Hanjun

Institution: Institute of Science Tokyo

Observed institutions: Tokyo Institute of Technology, Institute of Science Tokyo

ORCID: 0009-0009-2834-8846

Observed ORCID: 0009-0009-2834-8846

OpenAlex ID: A5011128805

Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway

2024 · Yuhao Shi, Masatake Tsuji, et al. · ACS Nano · 40

Structural and Optical Characterization of Ge Nanocrystals Showing Large Nonvolatile Memories in Metal-Oxide-Semiconductor Structures

2006 · Sung Kim, Suk Ho Choi, et al. · ANU Open Research (Australian National University) · 2

P‐248: Late‐News & Invited Poster: Impact of the Back‐Channel layer on the Mobility in thin a‐IGZO TFTs

2026 · Hanjun Cho, Masatake Tsuji, et al. · SID Symposium Digest of Technical Papers

Origin of Mobility Reduction in Thin a-IGZO TFTs and Its Improvement

2026 · Hanjun Cho, Masatake Tsuji, et al. · IEEE Electron Device Letters

(Invited) Low Contact Resistance on Buried Interfaces in Oxide Thin-Film Transistors by Selective-Area Reduction Using Hydrogenation Catalyst Electrode

2024 · Masatake Tsuji, Yuhao Shi, et al. · ECS Meeting Abstracts

Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway

2024 · ＳＨＩ, ＹＵＨＡＯ, Shi, Yuhao, et al. · Institutional Repositories DataBase (IRDB)

Two Types of Correlation between Donor-level and Concentration in a-IGZO

2023 · Hanjun Cho, Masatake Tsuji, et al. · Proceedings of the International Display Workshops

Works count: 10

Citation count: 67

H-index: 2

I10-index: 2