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Faran Chang

Observed names: Chang Fa-Ran, Fa-Ran Chang, Fa-ran CHANG, FaRan CHANG
ORCID: 0000-0001-8861-6173
Observed ORCID: 0000-0001-8861-6173
OpenAlex ID: A5011243092
Cliff-like conduction band offset at CdS/Cu2ZnSnS4 heterojunction prepared by sputtering CuSn alloy target using different stacking order
2019 · Xinxing Liu, Jie Guo, et al. · Solar Energy · 25
The measurement of responsivity of infrared photodetectors using a cavity blackbody
2023 · Nong Li, Dongwei Jiang, et al. · Journal of Semiconductors · 16
Fabrication and characterization of Cu2ZnSnS4 thin films by sputtering a single target at different temperature
2017 · Qichen Zhao, Ruiting Hao, et al. · Physica B Condensed Matter · 16
InP-based high-performance extended short wavelength p-B-n infrared photodetector with InGaAs/GaAsSb type-II superlattice absorption layer
2024 · Yan Liang, Wenguang Zhou, et al. · Applied Physics Letters · 15
High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices
2022 · Junkai Jiang, Faran Chang, et al. · Chinese Physics B · 15
Wet etching and passivation of GaSb-based very long wavelength infrared detectors
2022 · Xue-Yue Xu, Jun-Kai Jiang, et al. · Chinese Physics B · 12
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Performance study of short-wave infrared photodetectors based on InAs/GaSb/AlSb superlattice
2023 · Ruoyu Xie, Nong Li, et al. · Infrared Physics & Technology · 11
InP-based GaAsSb/AlGaAsSb/T2SL barrier-type low-bias tunable dual-band NIR/eSWIR photodetectors
2024 · Yan Liang, Wenguang Zhou, et al. · Optics Express · 10
Trap-assisted tunneling current and quantum efficiency loss in InGaAsSb short wavelength infrared photo detectors
2022 · Nong Li, Guowei Wang, et al. · Semiconductor Science and Technology · 9
Gradual funnel photon trapping enhanced InAs/GaSb type-II superlattice infrared detector
2022 · Lei Xiao, Peng Zhu, et al. · Optics Express · 9
MBE growth of mid-wavelength infrared photodetectors based on high quality InAs/AlAs/InAsSb superlattice
2021 · Jun-Kai Jiang, Yong Li, et al. · Journal of Crystal Growth · 9
Improvement of mid-wavelength InAs/InAsSb nBn infrared detectors performance through interface control
2024 · Ye Zhang, Yifan Shan, et al. · Infrared Physics & Technology · 8
High-performance infrared photodetectors based on InAs/InAsSb/AlAsSb superlattice for 3.5 µm cutoff wavelength spectra
2022 · Junkai Jiang, Guowei Wang, et al. · Optics Express · 8
Growth and photo-electronic characteristics of short/mid wave dual-band infrared detectors based on GaSb bulk and InAs/GaSb superlattices
2021 · XiaoLe Ma, Jie Guo, et al. · Optical Materials Express · 8
Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy
2022 · Fang-Qi Lin, Nong Li, et al. · Chinese Physics B · 7
Understanding the role of interface in advanced semiconductor nanostructure and its interplay with wave function overlap
2020 · Chenyuan Cai, Yunhao Zhao, et al. · Nano Research · 7
Investigation of active-region doping on InAs/GaSb long wave infrared detectors*
2020 · Su-Ning Cui, Dong-Wei Jiang, et al. · Chinese Physics B · 7
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MBE growth of high quality AlInSb/GaSb compound buffer layers on GaAs substrates
2020 · Yong Li, Xiaoming Li, et al. · Optical and Quantum Electronics · 7
Influence of Ag Layer Location on the Performance of Cu2ZnSnS4 Thin Film Solar Cells
2019 · Kang Gu, Ruiting Hao, et al. · Journal of Electronic Materials · 7
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Studies on Sputtered Cu–Zn–Sn–O Precursor to Fabricate Cu2ZnSnS4Thin Films
2018 · Xinxing Liu, Ruiting Hao, et al. · Zeitschrift für Naturforschung A · 7
High operating temperature mid-wavelength infrared detectors based on InAs/InAsSb superlattices with electron block interfacial graded doping
2025 · Ye Zhang, Yifan Shan, et al. · Optics Express · 6
Suppression of Tunneling Dark Current Through M-Region Tuning in InAs/GaSb VLWIR Photodetectors
2025 · Faran Chang, Wenguang Zhou, et al. · Journal of Lightwave Technology · 6
Improved solution-processed Cu2ZnSnS4 solar cells using a temporary Ag layer
2019 · Kang Gu, Ruiting Hao, et al. · Journal of Materials Science Materials in Electronics · 6
High responsivity short-wavelength dual-band photodetector based on AlInAsSb digital alloy
2023 · Wenguang Zhou, Yan Liang, et al. · Infrared Physics & Technology · 5
High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy
2019 · Fa-Ran Chang, Rui-Ting Hao, et al. · Chinese Physics B · 5
Works count: 40
Citation count: 270
H-index: 9
I10-index: 8
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