Author

Masahiko Yokoi

Observed names: M Yokoi, M. Yokoi

Institution: Tokyo Electron (Japan)

Observed institutions: Tokyo Electron (Japan), Aichi Steel Corporation (Japan), The University of Osaka

ORCID: 0000-0002-0692-2925

Observed ORCID: 0000-0002-0692-2925

OpenAlex ID: A5011377586

Pseudo‐Wet Plasma Mechanism Enabling High‐Throughput Dry Etching of SiO 2 by Cryogenic‐Assisted Surface Reactions

2024 · Shih‐Nan Hsiao, Makoto Sekine, et al. · Small Methods · 39

Shell-body fabrication for micromachines

1995 · H Suzuki, N Ohya, et al. · Journal of Micromechanics and Microengineering · 17

Charge density wave transitions in mechanically-exfoliated NbSe 3 devices

2021 · Koji Fujiwara, Shuichi Iwakiri, et al. · Japanese Journal of Applied Physics · 7

Development for high-aspect-ratio hole etching with hydrogen fluoride gas based cryogenic process

2025 · Ryutaro Suda, Masahiko Yokoi, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 6

Magnetic anisotropy observed at surface of amorphous silicate and its implications for the mechanism of dust alignment

2014 · M. Yokoi, M. Katsura, et al. · Planetary and Space Science · 3

(Invited) Novel Surface Reactions in Low-Temperature Regime for High-Aspect-Ratio Dielectric Etching

2023 · Masanobu Honda, Ryutaro Suda, et al. · ECS Meeting Abstracts

Works count: 6

Citation count: 72

H-index: 4

I10-index: 2