Author

Anil Prasad Dadi

Observed name: D. Anil Prasad

Observed institutions: National Institute of Technology Calicut, National Institute of Technology, Miyakonojo College

ORCID: 0000-0003-1356-000X

Observed ORCID: 0000-0003-1356-000X

OpenAlex ID: A5011750818

Investigation of High-k Dielectric Passivation Effects on DC Performance of AlN/β-Ga2O3 HEMTs

2025 · Nabojwal Acharjee, Sarita Singh, et al. · Semiconductors · 12

Performance comparison of 4H-SiC mesfets

2013 · D. Anil Prasad, Rama Komaragiri · Annual International Conference on Emerging Research Areas and International Conference on Microelectronics, Communications and Renewable Energy · 8

Investigation of AlGaN/GaN HEMT Device Performance with Variation of GaN Cap Layer Thickness along with Doping Concentration

2024 · Ellapu Bhanu Prakash, Vijay Maitra, et al. · International Conference on Computing, Communication and Networking Technologies (ICCCNT) · 7

Cap-layer engineering in AlGaN/GaN HEMTs with AlN buffer for enhanced breakdown and Johnson Figure of Merit

2026 · Ellapu Bhanu Prakash, Anil Prasad Dadi, et al. · Materials Science and Engineering B · 5

Effect of Buried depth, Thickness of Channel and Gate length on Breakdown Voltage in AlGaN/GaN HEMT

2024 · Anil Prasad Dadi, Ellapu Bhanu Prakash, et al. · International Conference on Internet of Everything, Microwave Engineering, Communication and Networks (IEMECON) · 4

Design and optimization of a buffer-free AlGaN/GaN HEMT with dielectric stack engineering for high power and frequency applications

2025 · Anil Prasad Dadi, Ellapu Bhanu Prakash, et al. · AEU - International Journal of Electronics and Communications · 2

Simulation Based Design and Characterization of a 150 nm GaN HEMT Small‐Signal Model for High‐Frequency and Low‐Noise Applications

2026 · Vijay Maitra, Ellapu Bhanu Prakash, et al. · Advanced Theory and Simulations · 1

Investigating the Effect of AlGaN Back Barrier in Buffer Free AlGaN/GaN HEMTs with Stacked HfO2/SiN Passivation for High Frequency Applications

2026 · Anil Prasad Dadi, Ellapu Bhanu Prakash, et al. · Semiconductors · 1

Performance Enhancement in Double-Gate TFETs Using a Gallium Antimonide Source Pocket

2025 · Tathagata Ghose, Ellapu Bhanu Prakash, et al. · International Conference on Smart Structures and Systems (ICSSS) · 1

Enhancing Breakdown Voltage and Switching Performance in AlGaN/GaN HEMTs via GaN Cap and Field Plate Co-Design

2025 · Ellapu Bhanu Prakash, Anil Prasad Dadi, et al. · Semiconductors · 1

An Advanced Electrothermal Small-Signal Compact Modeling of 250 nm GaN HEMTs Using ASM Methodology

2025 · Vijay Maitra, Ellapu Bhanu Prakash, et al. · IEEE Region 10 Conference (TENCON) · 1

Optimizing the Design of Non-Linear Power Amplifier Using an Advanced Small-Signal Model for AlGaN/GaN HEMT

2025 · Vijay Maitra, Anil Prasad Dadi, et al. · Lecture notes in networks and systems · 1

Works count: 12

Citation count: 44

H-index: 4

I10-index: 1