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Author

Sumito Ouchi

Observed name: Sumito OUCHI
Observed institution: AIR Water Inc. (Japan)
ORCID: 0000-0002-7787-9653
Observed ORCID: 0000-0002-7787-9653
OpenAlex ID: A5012155791
High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C‐SiC/Diamond Junctions for Practical Device Processes
2023 · Ryo Kagawa, Zhe Cheng, et al. · Small · 60
A Temperature Stable Amplifier Characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si
2021 · Arijit Bose, Debaleen Biswas, et al. · IEEE Access · 33
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Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer
2020 · Arijit Bose, Debaleen Biswas, et al. · IEEE Electron Device Letters · 22
AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process
2022 · Ryo Kagawa, Keisuke Kawamura, et al. · Applied Physics Express · 18
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AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications
2022 · Akio WAKEJIMA, Arijit BOSE, et al. · IEICE Transactions on Electronics · 5
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Influence of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si
2022 · Arijit Bose, Debaleen Biswas, et al. · IEICE Electronics Express · 5
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Fabrication of GaN/SiC/diamond structure for efficient thermal management of power device
2021 · Ryo Kagawa, Keisuke Kawamura, et al. · International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) · 3
Effect of Thick Nitride Layer on The RF Performance in GaN HEMTs on 3C-SiC/Si
2020 · Arijit Bose, Debaleen Biswas, et al. · International Conference on Solid State Devices and Materials (SSDM)
Large-Diameter 3C-SiC/Si Hetero-Epitaxial Substrates and Thick, High-Quality GaN Epitaxial Layers Grown on These Substrates for GaN Power Applications
2020 · Keisuke Kawamura, Shigeomi Hishiki, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 9
Citation count: 146
H-index: 5
I10-index: 4
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