Get started
Author

Hong Zhang

Effects of 300-MeV Proton Irradiation on Electrical Properties of β -Ga 2 O 3 Schottky Barrier Diodes
2024 · Xing Li, Weili Fu, et al. · IEEE Transactions on Electron Devices · 26
Single-event burnout in β -Ga2O3 Schottky barrier diode induced by high-energy proton
2024 · Xing Li, Weibo Jiang, et al. · Applied Physics Letters · 22
Mono-Energetic Proton Induced Damages in SiC Power MOSFETs
2022 · Chao Peng, Zhifeng Lei, et al. · IEEE Transactions on Device and Materials Reliability · 18
Synergistic Effect of Electrical Stress and Neutron Irradiation on Silicon Carbide Power MOSFETs
2022 · Shaozhong Yue, Ziwen Chen, et al. · IEEE Transactions on Electron Devices · 13
Total Ionizing Dose Effects of β-Ga₂O₃ Schottky Barrier Diode on Different Bias Conditions
2024 · Weili Fu, Teng Ma, et al. · IEEE Transactions on Electron Devices · 10
Single-event burnout in β-Ga2O3 Schottky barrier diode induced by heavy ion irradiation
2025 · Teng Ma, Xing Li, et al. · Applied Physics Letters · 8
Total Ionizing Dose Responses of β-Ga₂O₃ Thin Film Solar-Blind Ultraviolet Photodetectors
2025 · Tao Xiao, Teng Ma, et al. · IEEE Transactions on Electron Devices · 8
Temperature Dependence of Total Ionizing Dose Effects of β-Ga2O3 Schottky Barrier Diodes
2024 · Weili Fu, Teng Ma, et al. · Electronics · 8
The mechanism of single-event burnout in NiO/ β -Ga2O3 heterojunction diodes under atmospheric neutron irradiation
2026 · Silei Zhong, Jiajun Li, et al. · Applied Physics Letters · 7
Mechanism of Heavy Ion-Induced Leakage Current Increase in Normally-OFF p-GaN Gate HEMTs
2025 · Chao Peng, Zhifeng Lei, et al. · IEEE Transactions on Electron Devices · 7
Experimental Study of the Impact of Temperature on Atmospheric Neutron-Induced Single Event Upsets in 28 nm Embedded SRAM of SiP
2024 · Shunshun Zheng, Zhangang Zhang, et al. · Electronics · 7
Hydrogen Treatment-Induced Interface State Optimization in Ni/Au (001) β -Ga 2 O 3 Schottky Barrier Diode
2025 · Xing Li, Yahui Feng, et al. · IEEE Transactions on Electron Devices · 6
Atmospheric neutron-induced single-event burnout in β -Ga2O3 Schottky barrier diode
2025 · Xing Li, Weibo Jiang, et al. · Applied Physics Letters · 6
Investigation on Gate-Oxide Damage of SiC Power MOSFETs Induced by Heavy Ion
2025 · Ziwen Chen, Yuxiao Yang, et al. · IEEE Transactions on Electron Devices · 5
Influence of Transport Mechanism and Defect Behavior on Leakage Current in 4H-SiC JBS Diodes After Neutron Irradiation
2024 · Ruxue Bai, Hongxia Guo, et al. · IEEE Transactions on Electron Devices · 5
Influence of 300 MeV High-Energy Proton Irradiation on β-Ga 2 O 3 Solar-Blind Ultraviolet Photodetector
2025 · Tao Xiao, Zhifeng Lei, et al. · IEEE Transactions on Electron Devices · 4
Comparison of 14-MeV Neutron-Induced Damage in Si and SiC Power MOSFETs
2025 · Chao Peng, Hong Zhang, et al. · IEEE Transactions on Electron Devices · 4
Study of Laser-Induced Single Event Effects in SiC Power MOSFETs
2025 · Haoming Wang, Chao Peng, et al. · IEEE Transactions on Electron Devices · 4
Proton irradiation induced single-event burnout effect in P-GaN power devices
2024 · Ru Xue Bai, Hong Xia Guo, et al. · Radiation Physics and Chemistry · 4
Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors
2023 · Xiaojie Lu, Hongxia Guo, et al. · Electronics · 4
PDF
X-ray irradiation effects of carbon nanotube field-effect transistors
2025 · Tianxiang ZENG, Jifang LI, et al. · Acta Physica Sinica · 3
PDF
Investigation of heavy-ion induced degradation and catastrophic burnout mechanism in SiC diode
2025 · Hong Zhang, Chao Peng, et al. · Solid-State Electronics · 2
Effect of Cosmic Rays on the Failure Rate of Flexible Direct Current Converter Valves in High-Altitude Environment
2024 · Liu Yang, Zezhao Zhang, et al. · Electronics · 2
Impact of 300 MeV Proton Irradiation on β-Ga2O3 Schottky Barrier Diodes Under Varying Bias Voltages
2024 · Xing Li, Weibo Jiang, et al. · International Conference on Electronic Packaging Technology (ICEPT) · 2
Electrical stress of graphene field effect transistor under different bias voltages Reliability studies
2024 · Wang SongWen, Guo HongXia, et al. · Acta Physica Sinica · 2
Works count: 39
Citation count: 194
H-index: 8
I10-index: 5
Year
Topic
Type