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T.W. MacElwee

Observed names: T. MacElwee, T. W. MacElwee, T.W MacElwee, Tom MacElwee, Tom Macelwee
OpenAlex ID: A5012387118
An assessment of the state-of-the-art 0.5 μm bulk CMOS technology for RF applications
2002 · S.P. Voinigescu, S.W. Tarasewicz, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 73
Compact representation of temperature and power dependence of thermal resistance in Si, Inp and GaAs substrate devices using linear models
2002 · David J. Walkey, Tom J. Smy, et al. · Solid-State Electronics · 48
Defect reduction in GaN epilayers and HFET structures grown on (0001)sapphire by ammonia MBE
2001 · James B. Webb, H. Tang, et al. · Journal of Crystal Growth · 27
Fabrication of high performance GaN modulation doped field effect transistors
2000 · J. A. Bardwell, I. Foulds, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 26
Short-channel effects on MOSFET subthreshold swing
1995 · N.G. Tarr, D.J. Walkey, et al. · Solid-State Electronics · 22
High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100mm InP substrates using PH3 and AsH3
2004 · H.G Liu, J.Q Wu, et al. · Journal of Crystal Growth · 20
Bias Stress Measurements on High Performance AlGaN/GaN HFET Devices
2001 · Y. Liu, J.A. Bardwell, et al. · physica status solidi (a) · 17
A 1 V Switched-Capacitor ΣΔ modulator
2002 · S.S. Bazarjani, M. Snelgrove, et al. · International Symposium on Low Power Electronics and Design (ISLPED) · 16
Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy
2000 · H. Tang, J.B. Webb, et al. · Solid-State Electronics · 16
High-performance fully depleted silicon-on-insulator transistors
1990 · T.W. MacElwee, I.D. Calder, et al. · IEEE Transactions on Electron Devices · 16
High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
2021 · Gwen Rolland, Christophe Rodriguez, et al. · Energies · 11
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Investigation of high-current effects in staggered lineup InP/GaAsSb/InP heterostructure bipolar transistors: temperature characterization and comparison to conventional type-I HBTs and DHBTs
2002 · C.R. Bolognesi, M.W. Dvorak, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
Growth of high-performance GaN modulation-doped field-effect transistors by ammonia-molecular-beam epitaxy
2000 · H. Tang, J. B. Webb, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 10
Compact, Netlist-Based Representation of Thermal Transient Coupling Using Controlled Sources
2004 · D.J. Walkey, T.J. Smy, et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 9
Growth of GaN/AlGaN HFETs on SiC Substrates with Optimized Electrical Characteristics Using the Ammonia-MBE Technique
2002 · J.B. Webb, H. Tang, et al. · physica status solidi (a) · 9
Linear models for temperature and power dependence of thermal resistance in Si, InP and GaAs substrate devices
2002 · D.J. Walkey, T.J. Smy, et al. · Annual IEEE Semiconductor Thermal Measurement and Management Symposium/Proceedings · 9
Growth and Characterisation of High Electron Mobility Transistors on 4H-SiC by Ammonia Molecular Beam Epitaxy
2001 · J. Webb, Haipeng Tang, et al. · physica status solidi (a) · 9
Limitations on threshold adjustment by backgating in fully depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors
1998 · N. G. Tarr, Y. Wang, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 9
Characterization and Performance of D-Mode GaN HEMT Transistor Used in a Cascode Configuration
2013 · Tom MacElwee, John Roberts, et al. · ECS Transactions · 5
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The Thermal Integrity of Integrated GaN Power Modules
2013 · J. Roberts, T. MacElwee, et al. · Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) · 2
SOI back reflector for Tb-doped oxide electroluminescent devices
2011 · Harjinder Singh Saini, T. W. MacElwee, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2
Bright Green Visible Electroluminescence from Rare Earth Doped Silicon Rich SiOx
2006 · P. Mascher, T.W. MacElwee, et al. · IEEE International Conference on Group IV Photonics (GFP) · 2
A simple implanted backgate MOSFET for dynamic threshold control in fully-depleted SOI CMOS
2002 · N.G. Tarr, R. Soreefan, et al. · IEEE International SOI Conference (SOI) · 2
Characterization of AlGaN/GaN HEMT Devices Grown by MBE
2000 · T.W. MacElwee, J.A. Bardwell, et al. · Materials science forum · 2
Simple backgated MOSFET structure for dynamic thresholdcontrol in fully depleted SOI CMOS
1996 · N.G. Tarr, R. Soreefan, et al. · Electronics Letters · 2
Works count: 36
Citation count: 381
H-index: 11
I10-index: 13
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