Author

Dican Hou

Observed name: D. H. Hou

Institutions: University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices

Observed institutions: University of Electronic Science and Technology of China, Taiwan Semiconductor Manufacturing Company (Taiwan), State Key Laboratory of Electronic Thin Films and Integrated Devices

ORCID: 0000-0002-0217-2995

Observed ORCID: 0000-0002-0217-2995

OpenAlex ID: A5012516698

Low variability high endurance and low voltage arsenic-free selectors based on GeCTe

2021 · E. Ambrosi, C. H. Wu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 24

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

2021 · Zhangyi’an Yuan, Ming Qiao, et al. · IEEE Transactions on Electron Devices · 23

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A New Generation 700 V BCD Technology that Integrates Quadruple-RESURF LDMOS with Best-in-Class Specific On-Resistance

2023 · Ming Qiao, Dican Hou, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 11

A Bootstrap Diode Emulator Integration to 600 V N-Type Epitaxial Platform for High Voltage Gate Driver IC

2022 · Zhangyi’an Yuan, Dingxiang Ma, et al. · IEEE Electron Device Letters · 9

A review of high-voltage integrated power device for AC/DC switching application

2020 · Ming Qiao, Longfei Liang, et al. · Microelectronic Engineering · 9

Low-voltage (~1.3V), Arsenic Free Threshold Type Selector with Ultra High Endurance (> 10 11 ) for High Density 1S1R Memory Array

2021 · C. H. Wu, C. M. Lee, et al. · Symposium on VLSI Technology · 3

Mitigation of Space-Charge-Modulation in 800-V JFET for HV Start-up Circuit Toward High ON-BV Performance

2021 · Zhangyi'an Yuan, Xinjian Li, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 3

A Gradient Doped Integrated JFET With Improved Current Capability for HV Start-Up Circuit

2022 · Zhangyi’an Yuan, Dican Hou, et al. · IEEE Electron Device Letters · 2

Isolated JFET Design and Performance Analyze by Experiment Based on Standard 0.18µm BCD Platform

2023 · Dingxiang Ma, Yue Gao, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 1

Depletion MOS Controlled Current Regulator Diode Based on Bipolar Carrier Transport

2021 · Ming Qiao, Yong Chen, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

Works count: 10

Citation count: 85

H-index: 5

I10-index: 3