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Zige Tian

Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates
2020 · Zige Tian, Xun Chen, et al. · International Journal of Extreme Manufacturing · 156
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Study on nanomechanical properties of 4H-SiC and 6H-SiC by molecular dynamics simulations
2019 · Zige Tian, Xipeng Xu, et al. · Ceramics International · 105
Deformation anisotropy of nano-scratching on C-plane of sapphire: A molecular dynamics study and experiment
2021 · Jiaming Lin, Feng Jiang, et al. · Applied Surface Science · 99
Energy beam-based direct and assisted polishing techniques for diamond: A review
2023 · Zhuo Li, Feng Jiang, et al. · International Journal of Extreme Manufacturing · 98
Controllable material removal behavior of 6H-SiC wafer in nanoscale polishing
2021 · Qiufa Luo, Jing Lu, et al. · Applied Surface Science · 59
Molecular dynamics simulation of nanoindentation on c-plane sapphire
2020 · Jiaming Lin, Feng Jiang, et al. · Mechanics of Materials · 56
Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing
2023 · Qiufa Luo, Jing Lu, et al. · Nanoscale · 31
Chemical reaction on silicon carbide wafer (0 0 0 1 and 0 0 0 −1) with water molecules in nanoscale polishing
2022 · Zige Tian, Jing Lu, et al. · Applied Surface Science · 24
Atomistic understanding of the variable nano-hardness of C-plane sapphire considering the crystal anisotropy
2024 · Tian Qiu, Feng Jiang, et al. · Journal of Materials Research and Technology · 23
Atomistic understanding on the surface formation mechanism of nanoscale scratches along different crystal orientations of silicon carbide
2024 · Zige Tian, Jinghao Yang, et al. · Applied Surface Science · 17
Enhanced polishing performance and tribo-chemical removal mechanism of sapphire wafers under gas-assisted CMP (GA-CMP)
2025 · Yongchao Xu, Zichen Fan, et al. · Journal of Materials Processing Technology · 12
Understanding the Mechanisms of SiC–Water Reaction during Nanoscale Scratching without Chemical Reagents
2022 · Zhihao Cheng, Qiufa Luo, et al. · Micromachines · 9
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Atomistic insight into the surface formation mechanism of scratching 6H-SiC substrates by constructing atomic steps
2025 · Zige Tian, Jinghao Yang, et al. · Materials Science in Semiconductor Processing · 6
Atomic-Scale Revelation of Voltage-Modulated Electrochemical Corrosion Mechanism in 4H-SiC Substrate
2025 · Qiufa Luo, Dianlong Lin, et al. · Micromachines · 5
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Effect of abrasive morphology on material removal mechanism and surface integrity in SiC precision grinding via molecular dynamics simulations
2025 · Xiaoye Wang, Jinghao Yang, et al. · Nanotechnology · 2
Enhanced performance of thermal-assisted semi-fixed abrasive polishing on sapphire substrate using different types of abrasives
2025 · Yongchao Xu, Ruiyu Wu, et al. · The International Journal of Advanced Manufacturing Technology · 1
The Effect of Amorphization on the Reaction Removal of the Single Crystal Diamond Substrate Polished by the Sol-Gel Polishing Pad
2023 · Ningfei Hu, Ao Deng, et al. · SSRN Electronic Journal · 1
Microstructure evolution and material removal mechanism in laser-assisted machining of titanium alloys: a molecular dynamics study
2026 · Xiaoye Wang, Shuhao Ye, et al. · Physica Scripta
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Author response for "Effect of abrasive morphology on material removal mechanism and surface integrity in SiC precision grinding via molecular dynamics simulations"
2025 · Xiaoye Wang, Jinghao Yang, et al. · Publons reviews and discussion
Works count: 19
Citation count: 704
H-index: 11
I10-index: 11
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