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Gandhi Kallarasan Periyanayagam

Observed names: Gandhi Kallarasan, PERIYANAYAGAM, GANDHI KALLARASAN, Periyanayagam Gandhi Kallarasan
ORCID: 0000-0003-3870-5746
Observed ORCID: 0000-0003-3870-5746
OpenAlex ID: A5012706058
MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrate
2018 · Hirokazu Sugiyama, Kazuki Uchida, et al. · Journal of Crystal Growth · 19
Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate
2018 · Masaki Aikawa, Yuya Onuki, et al. · Japanese Journal of Applied Physics · 9
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Lasing Characteristics of 1.2 µm GaInAsP LD on InP/Si Substrate
2018 · Gandhi Kallarasan Periyanayagam, Tetsuo Nishiyama, et al. · physica status solidi (a) · 9
親水性直接接合InP/Si基板上に成長したGaInAsP/InPレーザダイオード接合の温度依存性
2018 · Aikawa Masaki, Onuki Yuya, et al. · Japanese Journal of Applied Physics · 3
Low threshold current of GalnAsP laser grown on directly bonded InP/Si substrate
2017 · Hirokazu Sugiyama, Tetsuo Nishiyama, et al. · Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) · 2
Lasing Characteristics of GaInAsP Laser Diodes on Directly Bonded InP/Si Substrates with a Gas out Channel
2024 · Liang Zhao, Gandhi Kallarasan Periyanayagam, et al. · physica status solidi (a) · 1
Gain Coefficient Comparison between Silicon and InP Laser Diode Substrate
2024 · Gandhi Kallarasan Periyanayagam, Kazuhiko Shimomura · physica status solidi (a) · 1
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Numerical Analysis and Lasing Characteristics of GaInAsP Double-Heterostructure Lasers on InP/Si Substrate
2022 · Gandhi Kallarasan Periyanayagam, Kazuhiko Shimomura · Journal of Electronic Materials · 1
1.5 μm GaInAsP Stripe Laser Comparison Between InP Substrate and Directly Bonded InP/Si Substrate
2018 · Periyanayagam Gandhi Kallarasan, Naoki Kamada, et al. · Conference on Lasers and Electro-Optics · 1
Lasing characteristics of MOVPE grown 1.5μΜ GalnAsP LD using directly bonded InP/Si substrate
2017 · Natsuki Hayasaka, Tetsuo Nishiyama, et al. · International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) · 1
Bonding temperature dependence of GalnAsP/InP wafer grown on directly bonded InP/Si substrate
2017 · Masaki Aikawa, Tetsuo Nishiyama, et al. · International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) · 1
1.5μm Laser Diode on InP/Si substrate by Epitaxial growth using Direct Bonding Method
2017 · Periyanayagam Gandhi Kallarasan, Tetsuo Nishiyama, et al. · Conference on Lasers and Electro-Optics · 1
Strain Dependence on the Threshold Current between InP Substrate and InP/Si Substrate LDs
2026 · Gandhi Kallarasan Periyanayagam, Koji Agata, et al. · Advanced materials research
Lasing characteristics of GaInAsP double-heterostructure lasers on silicon platform
2018 · PERIYANAYAGAM, GANDHI KALLARASAN · Institutional Repositories DataBase (IRDB)
1.5 μm GaInAsP High Mesa Laser Diode on Directly Bonded InP/Si Substrate
2018 · Gandhi Kallarasan Periyanayagam, Kazuki Uchida, et al. · IEEE International Semiconductor Laser Conference (ISLC)
直接貼付InP/Si基板上GaInAsPレーザのInPテンプレート膜厚依存性 (機構デバイス)
2018 · 政輝 相川, 夏樹 早坂, et al. · IEICE technical report. Speech
InP template layer thickness dependence of GaInAsP-InP layer grown on directly-bonded InP/Si substrate
2018 · Masaki Aikawa, Natsuki Hayasaka, et al. · IEICE Technical Report; IEICE Tech. Rep.
Dependence of InP template thickness on electrical characteristics of GaInAsP lasers on directly bonded InP / Si substrates
2018 · Xu Han, Gandhi Kallarasan, et al. · The Japan Society of Applied Physics
Annealing time dependence on void occupancy of directly-bonded InP/Si substrate (2)
2018 · Natsuki Hayasaka, Xu Han, et al. · The Japan Society of Applied Physics
Comparison of GaInAsP laser diode between hydrophilic bonded InP/Si substrate and InP substrate
2018 · Hiromu Yada, Kazuki Uchida, et al. · IEICE Technical Report; IEICE Tech. Rep.
Room temperature lasing of 1.5µm wavelength GaInAsP stripe laser diode on wafer bonded InP/Si substrate
2018 · Kazuki Uchida, Naoki Kamada, et al. · The Japan Society of Applied Physics
Cavity length dependence on threshold current density of 1.5µm wavelength GaInAsP stripe laser diode on wafer bonded InP/Si substrate
2018 · Hiromu Yada, Naoki Kamada, et al. · The Japan Society of Applied Physics
Lasing characteristics of 1.5µm GaInAsP ridge laser diode on directly bonded InP/Si substrate
2018 · Gandhi Kallarasan, Naoki Kamada, et al. · The Japan Society of Applied Physics
Annealing temperature time dependence on void opccupancy of directly-bonded InP/Si substrate
2018 · Natsuki Hayasaka, Yuya Onuki, et al. · The Japan Society of Applied Physics
GaInAsP / GaInAsP SCH-MQW laser diode on wafer bonded InP/Si substrate
2018 · Hirokazu Sugiyama, Naoki Kamada, et al. · The Japan Society of Applied Physics
Works count: 44
Citation count: 49
H-index: 3
I10-index: 1
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