Author

R. Paszkiewicz

Observed names: Paszkiewicz Regina, Paszkiewicz, Regina, R Paszkiewicz, Regina Paszkiewicz

Institution: Wrocław University of Science and Technology

Observed institutions: Warsaw University of Technology, Wrocław University of Science and Technology, University of Wrocław, Institute of Electron Technology

ORCID: 0000-0002-5710-9221

Observed ORCID: 0000-0002-5710-9221

OpenAlex ID: A5012883773

A novel electrospun ZnO nanofibers biosensor fabrication

2011 · Andrzej Stafiniak, Bogusław Boratyński, et al. · Sensors and Actuators B Chemical · 47

Contactless electromodulation spectroscopy of AlGaN∕GaN heterostructures with a two-dimensional electron gas: A comparison of photoreflectance and contactless electroreflectance

2006 · R. Kudrawiec, M. Syperek, et al. · Journal of Applied Physics · 40

Applications of functionally graded materials in optoelectronic devices

2005 · Mateusz Wośko, Adam Paszkiewicz, et al. · Optica Applicata · 37

Single crystalline Sc2O3/Y2O3 heterostructures as novel engineered buffer approach for GaN integration on Si (111)

2010 · L. Tarnawska, A. Giussani, et al. · Journal of Applied Physics · 33

MOVPE growth conditions optimization for AlGaN/GaN/Si heterostructures with SiN and LT-AlN interlayers designed for HEMT applications

2019 · Mateusz Wośko, Tomasz Szymański, et al. · Journal of Materials Science Materials in Electronics · 31

PDF

SbSI Nanosensors: from Gel to Single Nanowire Devices

2017 · Krystian Mistewicz, Marian Nowak, et al. · Nanoscale Research Letters · 29

PDF

Some effects of (NH4)2Sx treatment of n-GaAs surface on electrical characteristics of metal-SiO2–GaAs structures

2000 · S. Kochowski, B. Paszkiewicz, et al. · Vacuum · 22

Functionally graded semiconductor layers for devices application

2007 · B. Paszkiewicz, R. Paszkiewicz, et al. · Vacuum · 21

SbSI nanowires for ferroelectric generators operating under shock pressure

2016 · Krystian Mistewicz, Marian Nowak, et al. · Materials Letters · 20

Comparison of electrical, optical and structural properties of epitaxially grown HEMT's type AlGaN/AlN/GaN heterostructures on Al2O3, Si and SiC substrates

2016 · Mateusz Wośko, Bogdan Paszkiewicz, et al. · Superlattices and Microstructures · 19

Structure and optical properties of MOVPE and HVPE GaN films grown on GaN nanocrystalline powder substrate

2005 · M. Nyk, R. Kudrawiec, et al. · Journal of Crystal Growth · 19

MOVPE GaN Grown on Alternative Substrates

2001 · R. Paszkiewicz, B. Paszkiewicz, et al. · Crystal Research and Technology · 19

Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates

2014 · Mateusz Wośko, Bogdan Paszkiewicz, et al. · Journal of Crystal Growth · 17

Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si(111)

2012 · L. Tarnawska, P. Zaumseil, et al. · Journal of Applied Physics · 17

Nanostructuring of Si substrates by a metal-assisted chemical etching and dewetting process

2018 · Andrzej Stafiniak, Joanna Prażmowska, et al. · RSC Advances · 16

PDF

Origin of surface defects and influence of an in situ deposited SiN nanomask on the properties of strained AlGaN/GaN heterostructures grown on Si(111) using metal–organic vapour phase epitaxy

2016 · T. Szymański, M. Wośko, et al. · CrystEngComm · 16

Nondestructive method for evaluation of electrical parameters of AlGaN/GaN HEMT heterostructures

2013 · Bogdan Paszkiewicz, Mateusz Wosko, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 16

Sonochemical growth of nanomaterials in carbon nanotube

2017 · M. Jesionek, M. Nowak, et al. · Ultrasonics · 15

Two constant phase element behaviour of the admittance characteristics of GaAs metal-insulator-semiconductor structure with deep traps

2003 · S. Kochowski, K. Nitsch, et al. · Thin Solid Films · 15

Structure Characterization of (Al,Ga)N Epitaxial Layers by Means of X-Ray Diffractometry

2001 · J. Koz?owski, R. Paszkiewicz, et al. · physica status solidi (b) · 14

Field emission from GaN deposited on the (100) Si substrate

1999 · W Czarczyński, St Lasisz, et al. · Applied Surface Science · 14

Influence of AlN spacer on the properties of AlGaN/AlN/GaN heterostructures

2013 · Wosko, Mateusz, Paszkiewicz, Bogdan, et al. · Prace Naukowe Uniwersytetu Ekonomicznego we Wrocławiu · 13

PDF

Electrical properties of SiO 2 –(n) GaAs interface on the basis of measurements of MIS structure capacitance and conductance

1999 · S. Kochowski, K. Nitsch, et al. · Thin Solid Films · 13

Study on properties of diamond-like carbon films deposited by RF ICP PECVD method for micro- and optoelectronic applications

2023 · Wojciech Kijaszek, Artur Wiatrowski, et al. · Materials Science and Engineering B · 12

Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

2015 · Tomasz Szymański, Mateusz Wośko, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 12

Works count: 190

Citation count: 962

H-index: 16

I10-index: 30