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A. Revathy

Observed names: REVATHY A, Revathy A., Revathy Angamuthu
ORCID: 0000-0001-5938-9143
Observed ORCID: 0000-0001-5938-9143
OpenAlex ID: A5013144262
Investigation of AlGaN Channel HEMTs on β-Ga2O3 Substrate for High-Power Electronics
2022 · A. Revathy, C. S. Boopathi, et al. · Electronics · 30
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Design and analysis of normally-off GaN-HEMT using β-Ga2O3 buffer for low-loss power converter applications
2023 · A. Revathy, J. Vijaya Kumar, et al. · Micro and Nanostructures · 19
Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity
2024 · P. Murugapandiyan, A. Revathy, et al. · Journal of Electronic Materials · 14
L G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation
2022 · Revathy Angamuthu, Boopathi ChettiaGoundar Sengodan, et al. · International Journal of RF and Microwave Computer-Aided Engineering · 14
Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics
2024 · P. Murugapandiyan, Kalva Sri Rama Krishna, et al. · Journal of Electronic Materials · 13
Recent advancement in β-Ga2O3 MOSFETs: From material growth to device architectures for high-power electronics
2025 · P. Murugapandiyan, A.S. Augustine Fletcher, et al. · Microelectronic Engineering · 8
Ultra-scaled 55 nm InAlN/InGaN/GaN/AlGaN HEMT on β-Ga2O3 substrate: A TCAD-Based performance analysis for high-frequency power applications
2025 · A. Revathy, R. Thangam, et al. · Micro and Nanostructures · 6
Advanced gallium nitride high electron mobility transistors for biosensing applications: Progress, challenges, and future perspectives
2025 · A. Revathy, S. Ravi, et al. · Microelectronic Engineering · 4
Ultra-wide Bandgap AlGaN Channel HEMTs for Portable Power Electronics Applications
2024 · A. Revathy, C.S. Boopathi · International Journal of Nanoelectronics and Materials (IJNeaM) · 2
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Lead-Free ZnSe:Al/EuHfS3/CBTS/Au Chalcogenide Perovskite Solar Cells
2026 · S. Saju, A. Revathy, et al. · Physics of the Solid State
Composite‐channel In 0. 17 Al 0 . 83 N /In 0. 1 Ga 0 . 9 N / GaN /Al 0. 04 Ga 0 . 96 N high electron mobility transistors for RF applications
2021 · Revathy A., Boopathi C. S. · International Journal of RF and Microwave Computer-Aided Engineering
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Design and Analysis of AlGaN/InGaN/GaN and InAlN/InGaN/GaN HEMTs for High-Power Wide Bandwidth Applications
2021 · REVATHY A, C.S. Boopathi, et al. · Research Square
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Works count: 12
Citation count: 110
H-index: 6
I10-index: 5
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