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Djabar Maafri
Observed name:
D. Maafri
Institution:
Centre de Développement des Technologies Avancées
Observed institutions:
University of Sciences and Technology Houari Boumediene,
Centre de Développement des Technologies Avancées
ORCID:
0000-0002-1380-3502
Observed ORCIDs:
0000-0002-1380-3502,
0000-0002-7272-5372
OpenAlex ID:
A5013156360
A New High-Frequency HEMT GaN Extrinsic Capacitance Extraction Technique
2021
·
Djabar Maafri
, Abdelhalim A. Saadi
, et al.
·
IEEE Microwave and Wireless Components Letters
·
14
An efficient and reliable small signal intrinsic parameters extraction for HEMT GaN devices
2018
·
Djabar Maafri
, Abdelhalim Saadi
, et al.
·
Microwave and Optical Technology Letters
·
10
Efficient RF extrinsic parameters extraction technique for finfets
2014
·
Djabar Maafri
, Mustapha C. E. Yagoub
, et al.
·
Microwave and Optical Technology Letters
·
8
A 0.6-V/1.2-V low power single ended CMOS LNA for multi-standard RF front-ends
2014
·
Abdelhalim Slimane
, Sid Tedjini
, et al.
·
7
Efficient small-signal extraction technique for ultra-thin body and ultra-thin box FD-SOI transistor
2015
·
D. Maafri
, M. C. E. Yagoub
, et al.
·
IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization
·
6
An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices
2023
·
Boumediene Zatout
, Djabar Maafri
, et al.
·
International Journal of Numerical Modelling Electronic Networks Devices and Fields
·
4
Extraction of bias dependent access resistances of advanced MOSFETs
2022
·
Boumediene Zatout
, Djabar Maafri
, et al.
·
International Conference on Advanced Electrical Engineering (ICAEE)
·
3
Structural and nanomechanical properties of porous silicon: Cheap substrate for CMOS process industry
2020
·
Yasmina Belaroussi
, Gilles Scheen
, et al.
·
Surface and Interface Analysis
·
2
Prediction of RF performances of advanced MOS transistors from DC and low frequency measurements
2018
·
Djabar Maafri
, Babak Kazemi Esfeh
, et al.
·
Microwave and Optical Technology Letters
·
2
A 0.9 V low power reconfigurable CMOS folded cascode LNA for multi-standard wireless applications
2014
·
Abdelkader Taibi
, Abdelhalim Slimane
, et al.
·
International Design and Test Workshop (IDT)
·
2
An Efficient Extraction of the Bias Dependent Extrinsic Resistances of the HEMT GaN/SiC
2023
·
Boumediene Zatout
, Djabar Maafri
, et al.
·
International Conference on Electronics, Energy and Measurement (IC2EM)
·
1
Effect of Substrate Resistivity on Spiral Inductor in Radio Frequency Bands
2023
·
Yasmina Belaroussi
, Abdelkader Taibi
, et al.
·
International Conference on Electronics, Energy and Measurement (IC2EM)
·
1
A 0.6 V, 2.1 mW CMOS UWB LNA for 3–5 GHz wireless receivers
2016
·
A. Slimane
, A. Taibi
, et al.
·
IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)
·
1
Mechanical behavior of porous silicon: Ab initio and nanoindentation study
2025
·
S. Bouchendouka
, H. Lachenani
, et al.
·
Materials Science and Technology
Efficient RF Small-Signal Parasitic Parameters Extraction Technique For The Advanced MOSFETs
2023
·
Djabar Maafri
, Boumediene Zatout
, et al.
·
International Conference on Electronics, Energy and Measurement (IC2EM)
3‐5GHz無線受信機のための0.6V,2.1mW CMOS UWB LNA【Powered by NICT】
2016
·
Abdelhalim Slimane
, Abdelkader Taibi
, et al.
·
IEEE Conference Proceedings
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Works count:
16
Citation count:
61
H-index:
5
I10-index:
2
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