Author

Susanne Beuer

Observed names: Beuer, Susanne, S Beuer, S. Beuer, S.K. Beuer

Institution: Fraunhofer Institute for Integrated Systems and Device Technology

Observed institution: Fraunhofer Institute for Integrated Systems and Device Technology

ORCID: 0009-0009-2485-4725

Observed ORCID: 0009-0009-2485-4725

OpenAlex ID: A5013395619

Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques

2010 · M. Rommel, G. Spoldi, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 47

Experimental observation of FIB induced lateral damage on silicon samples

2009 · G. Spoldi, S. Beuer, et al. · Microelectronic Engineering · 28

Growth of non-polar and semi-polar GaN on sapphire substrates by magnetron sputter epitaxy

2025 · Katrin Pingen, Niklas Wolff, et al. · Applied Surface Science Advances · 16

Intragranular thermal fatigue of Cu thin films: Near-grain boundary hardening, strain localization and voiding

2023 · K. Hlushko, T. Ziegelwanger, et al. · Acta Materialia · 13

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Novel approach based on continuous trench modelling to predict focused ion beam prepared freeform surfaces

2017 · A. Bilbao-Guillerna, R.T. Eachambadi, et al. · Journal of Materials Processing Technology · 12

Accurate parameter extraction for the simulation of direct structuring by ion beams

2007 · S. Beuer, M. Rommel, et al. · Microelectronic Engineering · 12

Multiscale morphological analysis of bone microarchitecture around Mg-10Gd implants

2023 · Sandra Sefa, Jonathan Espiritu, et al. · Bioactive Materials · 11

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UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale

2008 · H. Schmitt, B. Amon, et al. · Microelectronic Engineering · 11

III-Nitride Magnetron Sputter Epitaxy on Si: Controlling Morphology, Crystal Quality, and Polarity Using Al Seed Layers

2024 · Katrin Pingen, Niklas Wolff, et al. · ACS Applied Materials & Interfaces · 10

SSRM characterisation of FIB induced damage in silicon

2008 · S Beuer, V Yanev, et al. · Journal of Physics Conference Series · 10

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Active Fuse

2006 · S.E. Berberich, M. Marz, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 9

AlScN/GaN Multichannel Heterostructures Grown by Metal–Organic Chemical Vapor Deposition

2025 · Teresa Duarte, Isabel Streicher, et al. · Advanced Materials Interfaces · 8

Comparison of silicon and 4H silicon carbide patterning using focused ion beams

2015 · S.K.P. Veerapandian, S. Beuer, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 8

Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC

2022 · Alexander May, Mathias Rommel, et al. · Materials science forum · 7

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Recent improvements in the integration of field emitters into scanning probe microscopy sensors

2008 · S. Beuer, M. Rommel, et al. · Microelectronic Engineering · 4

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Modeling the partially detected backside reflectance of transparent substrates in reflectance microspectroscopy

2025 · Julian Schwarz, Jan Dick, et al. · Micron · 3

Impact of Surface Treatment on Noise in PL Measurements of Silicon Vacancies in 4H-SiC Lateral PIN-Diodes

2026 · Jannik H. Schwarberg, Fabian Magerl, et al. · Nano Letters · 2

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Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD