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Tony Vanhoucke

Observed names: T Vanhoucke, T. Vanhoucke, Vanhoucke, T.
Institution: NXP (Germany)
OpenAlex ID: A5013424686
Revised Method for Extraction of the Thermal Resistance Applied to Bulk and SOI SiGe HBTs
2004 · T. Vanhoucke, H.M.J. Boots, et al. · IEEE Electron Device Letters · 58
QUBIC4plus: a cost-effective BiCMOS manufacturing technology with elite passive enhancements optimized for 'silicon-based' RF-system-in-package environment
2005 · P. Deixler, T. Letavic, et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 38
Unilfied electro-thermal stability criterion for bipolar transistors
2005 · T. Vanhoucke, G.A.M. Hurkx · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 32
A new analytical model for the thermal resistance of deep-trench bipolar transistors
2006 · T. Vanhoucke, G.A.M. Hurkx · IEEE Transactions on Electron Devices · 24
Physical Description of the Mixed-Mode Degradation Mechanism for High Performance Bipolar Transistors
2006 · T. Vanhoucke, G.A.M. Hurkx, et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 23
RF reliability of short channel NMOS devices
2009 · D. Stephens, T. Vanhoucke, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 22
A Novel Fully Self-Aligned SiGe:C HBT Architecture Featuring a Single-Step Epitaxial Collector-Base Process
2007 · J.J.T.M. Donkers, T. Vanhoucke, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 20
The power conversion efficiency of visible light emitting devices in standard BiCMOS processes
2008 · P.I. Kuindersma, T. Hoang, et al. · IEEE International Conference on Group IV Photonics (GFP) · 15
Metal emitter SiGe:C HBTs
2005 · J.J.T.M. Donkers, T. Vanhoucke, et al. · 14
SiGe:C profile optimization for low noise performance
2011 · P.H.C. Magnee, R. van Dalen, et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 11
Simultaneous Extraction of the Base and Thermal Resistances of Bipolar Transistors
2005 · T. Vanhoucke, G.A.M. Hurkx · IEEE Transactions on Electron Devices · 10
Time-to-Fail Extraction Model for the "Mixed-Mode" Reliability of High-Performance SiGe Bipolar Transistors
2006 · Danielle Panko, T. Vanhoucke, et al. · IEEE International Reliability Physics Symposium proceedings · 7
Temperature and geometry dependence of the electrothermal instability of bipolar transistors
2012 · A. J. Scholten, T. Vanhoucke, et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 6
Layout and spacer optimization for high-frequency low-noise performance in HBT's
2010 · T. Vanhoucke, J.J.T.M. Donkers, et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 5
The influence of lateral device scaling and airgap deep trench isolation on the reliability performance of 200 GHz SiGe:C HBTs
2006 · A Piontek, T Vanhoucke, et al. · Semiconductor Science and Technology · 5
Virtual technology for RF process and device development
2011 · T. Vanhoucke, D.B.M. Klaassen, et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 4
Double-polysilicon self-aligned SiGe HBT architecture based on nonselective epitaxy and polysilicon reflow
2012 · H. Mertens, P. H. C. Magnee, et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 3
Fast noise prediction for process optimization using only standard DC and S-parameter measurements
2012 · E. Gridelet, A. J. Scholten, et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 3
Extended high voltage HBTs in a high-performance BiCMOS process
2011 · H. Mertens, P.H.C. Magnee, et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 3
An SiGe heterojunction bipolar transistor with very high open-base breakdown voltage
2014 · T. V. Dinh, T. Vanhoucke, et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 2
Investigation of power and linearity performance for low- and high-voltage SiGe HBTs
2013 · T. V. Dinh, R. Pijper, et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 2
Experimental proof of current bifurcation and mutual heating in bipolar transistor arrays
2008 · T. Vanhoucke, P.I. Kuindersma, et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 2
Influence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTs
2006 · A. Piontek, T. Vanhoucke, et al. · 2006 International SiGe Technology and Device Meeting · 2
(Invited) Application-Specific SiGe HBT Optimization
2014 · Peter H.C. Magnée, Rob van Dalen, et al. · ECS Transactions · 1
Influence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTs
2006 · A. Piontek, T. Vanhoucke, et al. · 2006 International SiGe Technology and Device Meeting · 1
Works count: 35
Citation count: 316
H-index: 10
I10-index: 11
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