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Salvatore Cimino

TiN x / HfO 2 interface dipole induced by oxygen scavenging
2011 · V. V. Afanas’ev, A. Stesmans, et al. · Applied Physics Letters · 46
Accelerated wear-out of ultra-thin gate oxides after irradiation
2003 · A. Cester, S. Cimino, et al. · IEEE Transactions on Nuclear Science · 45
Towards barrier height modulation in HfO2/TiN by oxygen scavenging – Dielectric defects or metal induced gap states?
2011 · Luigi Pantisano, V.V. Afanas’ev, et al. · Microelectronic Engineering · 44
Device reliability metric for end-of-life performance optimization based on circuit level assessment
2017 · A. Kerber, P. Srinivasan, et al. · IEEE International Reliability Physics Symposium proceedings · 31
Collapse of MOSFET drain current after soft breakdown and its dependence on the transistor aspect ratio W/L
2003 · A. Cester, S. Cimino, et al. · IEEE International Reliability Physics Symposium proceedings · 31
Assessing device reliability margin in scaled CMOS technologies using ring oscillator circuits
2017 · A. Kerber, S. Cimino, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 30
A study of the leakage current in TiN/HfO2/TiN capacitors
2011 · S. Cimino, A. Padovani, et al. · Microelectronic Engineering · 27
Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications
2020 · A. Razavieh, Y. Chen, et al. · IEEE Journal of the Electron Devices Society · 22
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Self-Heating Effects on Hot Carrier Degradation and Its Impact on Logic Circuit Reliability
2019 · Peter Paliwoda, Zakariae Chbili, et al. · IEEE Transactions on Device and Materials Reliability · 21
Reliability challenges for 2.5D/3D integration: An overview
2018 · C S Premachandran, Seungman Choi, et al. · IEEE International Reliability Physics Symposium proceedings · 18
Statistical model for radiation-induced wear-out of ultra-thin gate oxides after exposure to heavy ion irradiation
2003 · A. Cester, S. Cimino, et al. · IEEE Transactions on Nuclear Science · 18
FinFET with Contact over Active-Gate for 5G Ultra-Wideband Applications
2020 · A. Razavieh, V. Mahajan, et al. · Symposium on VLSI Technology · 16
Understanding gate metal work function (mWF) impact on device reliability — A holistic approach
2018 · P. Srinivasan, R. Ranjan, et al. · IEEE International Reliability Physics Symposium proceedings · 12
Impact of TSV process on 14nm FEOL and BEOL reliability
2017 · Sukeshwar Kannan, C. S. Premachandran, et al. · IEEE International Reliability Physics Symposium proceedings · 8
Hot carrier degradation on n-channel HfSiON MOSFETs: effects on the device performance and lifetime
2005 · S. Cimino, L. Pantisano, et al. · IEEE International Reliability Physics Symposium proceedings · 8
Impact of 3D Via Middle TSV Process on 20nm Wafer Level FEOL and BEOL Reliability
2016 · Premachandran C. S., Luke England, et al. · IEEE Electronic Components and Technology Conference (ECTC) · 7
Optimized LDMOS Offering for Power Management and RF Applications
2022 · S. Cimino, J. Singh, et al. · IEEE International Reliability Physics Symposium proceedings · 6
Hot Carrier Reliability Improvement of Thicker Gate Oxide nFET Devices in Advanced FinFETs
2019 · M. Iqbal Mahmud, A. Gupta, et al. · IEEE International Reliability Physics Symposium proceedings · 5
Self-Heating Effects on Hot Carrier Degradation and its Impact on Ring-Oscillator Reliability
2018 · P. Paliwoda, Z. Chbili, et al. · IEEE International Integrated Reliability Workshop final report · 5
Comprehensive 3D TSV Reliability Study on 14nm FINFET Technology with Thinned Wafers
2018 · C.S. Premachandran, Rakesh Ranjan, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 5
Understanding the impact of High-k Post Deposition Anneal Temperature on FinFET Reliability – Trade-offs, optimization and mitigation
2018 · P. Srinivasan, R. Ranjan, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 5
Electrical characterization at a nanometer scale of weak spots in irradiated SiO/sub 2/ gate oxides
2005 · M. Porti, M. Nafria, et al. · IEEE Transactions on Nuclear Science · 5
FinFET LDMOS technology challenges and opportunities for digital TV and 6GHz WiFi PA applications
2021 · Jagar Singh, S. Cimino, et al. · Symposium on VLSI Technology · 4
Feasibility Study of $\hbox{Mo/SiO}_{x}/\hbox{Pt}$ Resistive Random Access Memory in an Inverter Circuit for FPGA Applications
2011 · Sangsu Park, Jungho Shin, et al. · IEEE Electron Device Letters · 4
Incidence of oxide and interface degradation on MOSFET performance
2004 · A Cester, L Bandiera, et al. · Microelectronic Engineering · 4
Works count: 40
Citation count: 445
H-index: 12
I10-index: 13
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