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Nadezhda Ivanovna Anisimova

Observed names: Anisimova N. I., Anisimova. N. I., N. Anisimova, N. I. Anisimova, N.I. Anisimova, Nadezhda Anisimova, Nadezhda I. Anisimova, Н. И. Анисимова, Н.И. Анисимова
Institution: Herzen University
ORCID: 0000-0003-2150-9677
Observed ORCID: 0000-0003-2150-9677
OpenAlex ID: A5013661506
Defect influence on charge transport in chalcogenide glasses
2001 · N. I. Anisimova, G. A. Bordovsky, et al. · Radiation effects and defects in solids · 12
Electrical and thermal properties of Bi/sub 2/O/sub 3/, PbO and mixed oxides of Bi/sub 2/O/sub 3/-PbO system
2004 · N.I. Anisimova, G.A. Bordovsky, et al. · IEEE International Conference on Solid Dielectrics · 11
Dielectric relaxation in amorphous and crystalline Sb2Te3 thin films
2021 · A. A. Kononov, R. A. Castro, et al. · Journal of Materials Science Materials in Electronics · 10
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Specific features of the photodielectric effect in amorphous As2Se3 layers
2013 · N. I. Anisimova, V. A. Bordovskii, et al. · Technical Physics Letters · 9
Correlation between bismuth concentration and distribution of relaxators in As2Se3(Bi) layers
2006 · R.A. Castro, G.A. Bordovsky, et al. · Journal of Non-Crystalline Solids · 9
Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide
2010 · N. I. Anisimova, V. A. Bordovsky, et al. · Semiconductors · 8
Local structure of germanium-sulfur, germanium-selenium, and germanium-tellurium vitreous alloys
2009 · G. A. Bordovsky, E. I. Terukov, et al. · Semiconductors · 7
High-Frequency Conductivity of Amorphous and Crystalline Sb2Te3 Thin Films
2023 · Rene Castro, Aleksei Kononov, et al. · Coatings · 6
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Dielectric Relaxation and Charge Transfer in Amorphous MoS2 Thin Films
2020 · Aleksei A. Kononov, Rene A. Castro, et al. · physica status solidi (b) · 6
Photostructural reconstructions of As-S and As-Se semiconductor glasses
2009 · G. A. Bordovsky, S. A. Nemov, et al. · Semiconductors · 5
Dielectric Relaxation in Thin Layers of the Ge28.5Pb15S56.5 Glassy System
2018 · R. A. Castro, N. I. Anisimova, et al. · Semiconductors · 4
Hyperfine interactions of copper ions in the structure of high-temperature superconductors
2014 · G. A. Bordovskii, N. I. Anisimova, et al. · Glass Physics and Chemistry · 4
A study of tin impurities in crystalline and amorphous silicon by means of Mössbauer spectroscopy
2013 · A. Marchenko, N. Anisimova, et al. · Glass Physics and Chemistry · 3
Study of the structure of a-As2Se3〈Bi〉 x amorphous layers by dielectric spectroscopy
2013 · N. I. Anisimova, V. A. Bordovsky, et al. · Semiconductors · 3
The photoinduced change of dissolution rate in As2Se3glasses
2001 · N. I. Anisimova, G. A. Bordovsky, et al. · Radiation effects and defects in solids · 3
Ultralow-frequency photoelectric response of amorphous As2Se3 layers
2013 · N. I. Anisimova, V. A. Bordovsky, et al. · Semiconductors · 2
Two-electron tin centers with a negative correlation energy in lead sulfide
2013 · G. A. Bordovsky, A. V. Marchenko, et al. · Glass Physics and Chemistry · 2
The state of tin impurity atoms in vitreous germanium chalcogenides
2013 · G. A. Bordovskii, A. V. Marchenko, et al. · Glass Physics and Chemistry · 2
The Spectroscopy of localized states in glassy films Ge/sub 28.5/Pb/sub 15/S/sub 56.5/
2004 · G.A. Bordovsky, V.A. Bordovsky, et al. · International Conference on Properties and Applications of Dielectric Materials (ICPADM) · 2
Polarization properties of layers in As-Se modified system
2002 · N. Anisimova, V. Avanesyan, et al. · International Symposium on Electrets · 2
Study of relaxers distribution in thin layers of amorphous MoTe-=SUB=-2-=/SUB=-
2022 · Castro Arata R. A., Khachaturov S. E., et al. · Physics of the Solid State · 1
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Polarization processes in thin layers of glassy hybrid system Ge-=SUB=-28.5-=/SUB=-Pb-=SUB=-14.0-=/SUB=-Fe-=SUB=-1.0-=/SUB=-S-=SUB=-56.5-=/SUB=-
2022 · Castro-Arata R. A., Grabko G. I., et al. · Физика и техника полупроводников · 1
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Перенос заряда в тонких слоях стеклообразной гибридной системы Ge-=SUB=-28.5-=/SUB=-Pb-=SUB=-14.5-=/SUB=-Fe-=SUB=-0.5-=/SUB=-S-=SUB=-56.5-=/SUB=-
2021 · Р.А. Кастро-Арата, Г.И. Грабко, et al. · Физика и техника полупроводников · 1
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Polarization Processes in Thin Layers of Amorphous MoS2 Obtained by RF Magnetron Sputtering
2020 · A. A. Kononov, R. A. Castro-Arata, et al. · Semiconductors · 1
Low-frequency dielectric relaxation in amorphous MoTe2 layers obtained by RF magnetron sputtering
2020 · Rene Castro, Sergej Khachaturov, et al. · AIP conference proceedings · 1
Works count: 52
Citation count: 122
H-index: 7
I10-index: 3
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