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Sayak Dutta Gupta

Observed names: Gupta Sayak Dutta, Gupta, Sayak Dutta, Sayak Gupta
ORCID: 0000-0002-4440-4053
Observed ORCID: 0000-0002-4440-4053
OpenAlex ID: A5013673463
Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering
2019 · Sayak Dutta Gupta, Ankit Soni, et al. · IEEE Transactions on Electron Devices · 53
On the Channel Hot-Electron’s Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs
2021 · Rajarshi Roy Chaudhuri, Vipin Joshi, et al. · IEEE Transactions on Electron Devices · 40
Part I: Physical Insights Into Dynamic R ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs
2021 · Sayak Dutta Gupta, Vipin Joshi, et al. · IEEE Transactions on Electron Devices · 37
Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance
2023 · Vipin Joshi, Rajarshi Roy Chaudhuri, et al. · IEEE Transactions on Electron Devices · 25
Interplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs—Part II
2020 · Vipin Joshi, Sayak Dutta Gupta, et al. · IEEE Transactions on Electron Devices · 21
Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs—Part I
2020 · Vipin Joshi, Sayak Dutta Gupta, et al. · IEEE Transactions on Electron Devices · 20
On the ESD behavior of AlGaN/GaN schottky diodes and trap assisted failure mechanism
2017 · Bhawani Shankar, Rudrarup Sengupta, et al. · Electrical Overstress/Electrostatic Discharge Symposium · 16
Novel Surface Passivation Scheme by Using p-Type AlTiO to Mitigate Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs—Part II
2021 · Sayak Dutta Gupta, Vipin Joshi, et al. · IEEE Transactions on Electron Devices · 15
Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs Under Fast Cyclic Transient Stress
2020 · Bhawani Shankar, Swati Shikha, et al. · IEEE Transactions on Device and Materials Reliability · 12
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On the trap assisted stress induced safe operating area limits of AlGaN/GaN HEMTs
2018 · Bhawani Shankar, Ankit Soni, et al. · IEEE International Reliability Physics Symposium proceedings · 11
Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG
2022 · Sayak Dutta Gupta, Vipin Joshi, et al. · IEEE Transactions on Electron Devices · 10
Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R ON of AlGaN/GaN HEMTs Under Semi-on State
2022 · Sayak Dutta Gupta, Vipin Joshi, et al. · IEEE Transactions on Electron Devices · 9
ESD Behavior of AlGaN/GaN Schottky Diodes
2019 · Bhawani Shankar, Sayak Dutta Gupta, et al. · IEEE Transactions on Device and Materials Reliability · 9
Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs
2022 · Vipin Joshi, Sayak Dutta Gupta, et al. · IEEE Transactions on Electron Devices · 8
Trap Assisted Stress Induced ESD Reliability of GaN Schottky Diodes
2018 · Bhawani Shankar, Rahul Singh, et al. · Electrical Overstress/Electrostatic Discharge Symposium · 8
Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes
2023 · Rasik Rashid Malik, Vipin Joshi, et al. · IEEE Transactions on Electron Devices · 6
Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic R ON Behavior in AlGaN/GaN HEMTs—Part II
2023 · Rajarshi Roy Chaudhuri, Amratansh Gupta, et al. · IEEE Transactions on Electron Devices · 6
Observations and Physical Insights Into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer
2022 · Rajarshi Roy Chaudhuri, Vipin Joshi, et al. · IEEE Transactions on Electron Devices · 6
Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors
2021 · Sayak Dutta Gupta, Vipin Joshi, et al. · Journal of Applied Physics · 6
Safe Operating Area (SOA) reliability of Polarization Super Junction (PSJ) GaN FETs
2018 · Bhawani Shankar, Ankit Soni, et al. · IEEE International Reliability Physics Symposium proceedings · 6
Time Dependent Early breakdown of AIGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs Under Fast Cyclic Transient Stress
2018 · Bhawani Shankar, Ankit Soni, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 5
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Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic R on Behavior in AlGaN/GaN HEMTs—Part I
2023 · Rajarshi Roy Chaudhuri, Amratansh Gupta, et al. · IEEE Transactions on Electron Devices · 4
Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si
2023 · Vipin Joshi, Rajarshi Roy Chaudhuri, et al. · IEEE Transactions on Electron Devices · 4
Observation of Kink effect in Carbon-doped GaN-on-Si HEMTs for Power Applications
2025 · Pallavi Kumari, Sayak Dutta Gupta, et al. · IEEE International Reliability Physics Symposium proceedings · 3
Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences
2023 · Rajarshi Roy Chaudhuri, Vipin Joshi, et al. · IEEE International Reliability Physics Symposium proceedings · 3
Works count: 46
Citation count: 361
H-index: 10
I10-index: 11
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