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Annekathrin Zeun
Observed name:
A. Zeun
Institution:
GlobalFoundries (Germany)
Observed institution:
GlobalFoundries (Germany)
ORCID:
0009-0007-0652-236X
Observed ORCID:
0009-0007-0652-236X
OpenAlex ID:
A5013710677
Multiple-Independent-Gate Reconfigurable FETs Processed on Industrial 300 mm FDSOI
2025
·
N. Bhattacharjee
, Y. He
, et al.
·
IEEE Electron Device Letters
·
22
SiGe channels for VT control of high-k metal gate transistors for 32nm complementary metal oxide semiconductor technology and beyond
2011
·
Carsten Reichel
, Joerg Schoenekess
, et al.
·
Thin Solid Films
·
8
Speeding-Up Emerging Device Development Cycles by Generating Models via Machine-Learning directly from Electrical Measurements
2024
·
J. Trommer
, M. Reuter
, et al.
·
7
Circuit Polymorphism Enabled by RFET Devices Processed on Industrial FDSOI
2025
·
N. Bhattacharjee
, G. Galderisi
, et al.
·
IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
·
6
Ultra-Low Voltage Reconfigurable FETs in 22nm FDSOI Technology Enabling Dynamic Circuit Obfuscation for Embedded Security
2026
·
Yuxuan He
, Aniruddh Holemadlu
, et al.
·
IEEE Journal of the Electron Devices Society
·
4
Surface chemistry models for low temperature Si epitaxy process simulation in a single-wafer reactor
2024
·
Linda Jäckel
, Andreas Zienert
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
4
PDF
Control of topography and morphology for channel SiGe by in-situ HCl etching for future CMOS technologies with high-K metal gate
2011
·
Carsten Reichel
, Stephan Kronholz
, et al.
·
Solid-State Electronics
·
3
A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware
2026
·
Juan P. Martinez
, Yuxuan He
, et al.
·
Advanced Electronic Materials
·
2
S2–2 Back-Bias Reconfigurable Field Effect Transistor: A Flexible Add-On Functionality for 22 nm FDSOI
2021
·
V. Sessi
, Maik Simon
, et al.
·
IEEE Silicon Nanoelectronics Workshop
·
1
SiGe HBT integrated in a 22 nm FDSOI
2024
·
H. Mulaosmanovic
, H. S. Chen
, et al.
·
European Microwave Integrated Circuits Conference
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Works count:
10
Citation count:
57
H-index:
4
I10-index:
1
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