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Jen‐Wei Huang

Growth of Cu2O on Ga-doped ZnO and their interface energy alignment for thin film solar cells
2010 · L. M. Wong, S. Y. Chiam, et al. · Journal of Applied Physics · 70
Preparation and characterization of functional fabrics from bamboo charcoal/silver and titanium dioxide/silver composite powders and evaluation of their antibacterial efficacy
2009 · Fu-Chu Yang, Kuo-Hui Wu, et al. · Materials Science and Engineering C · 47
Role of oxygen for highly conducting and transparent gallium-doped zinc oxide electrode deposited at room temperature
2011 · L. M. Wong, S. Y. Chiam, et al. · Applied Physics Letters · 46
The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
2013 · Jen-Wei Huang, Rui Zhang, et al. · Applied Physics Letters · 35
Light emitting diodes of fully conjugated heterocyclic aromatic rigid-rod polymer doped with multi-wall carbon nanotubes
2005 · Jen-Wei Huang, Shih Jung Bai · Nanotechnology · 32
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Abnormal Hump Effect Induced by Hydrogen Diffusion During Self-Heating Stress in Top-Gate Amorphous InGaZnO TFTs
2020 · Hong-Chih Chen, Jian-Jie Chen, et al. · IEEE Transactions on Electron Devices · 28
Electrochemical Metallization Resistive Memory Devices Using $\hbox{ZnS-SiO}_{2}$ as a Solid Electrolyte
2011 · J. Q. Huang, L. P. Shi, et al. · IEEE Electron Device Letters · 28
Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
2014 · Tian-Jian Chu, Tsung-Ming Tsai, et al. · IEEE Electron Device Letters · 25
Examining the transparency of gallium-doped zinc oxide for photovoltaic applications
2011 · L.M. Wong, S.Y. Chiam, et al. · Solar Energy Materials and Solar Cells · 22
Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- $k$/Metal Gate Stacks Directly on SiGe
2009 · J. Huang, P.D. Kirsch, et al. · IEEE Electron Device Letters · 22
Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs
2011 · S. Deora, A. Paul, et al. · IEEE Electron Device Letters · 20
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Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors
2021 · Yu-Hsuan Yeh, Ting-Chang Chang, et al. · Journal of Physics D Applied Physics · 18
Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
2013 · Kuan-Chang Chang, Jen-wei Huang, et al. · Nanoscale Research Letters · 17
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Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT
2008 · J. Huang, P. D. Kirsch, et al. · Symposium on VLSI Technology · 15
Gate Dielectric Breakdown in A-InGaZnO Thin Film Transistors With Cu Electrodes
2021 · Mao-Chou Tai, Yu-Xuan Wang, et al. · IEEE Electron Device Letters · 13
Investigation of Threshold Voltage and Drain Current Degradations in Si3N4/AlGaN/GaN MIS-HEMTs Under X-Ray Irradiation
2023 · Hung-Ming Kuo, Ting-Chang Chang, et al. · IEEE Transactions on Electron Devices · 12
Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory
2021 · Wen-Chung Chen, Yung-Fang Tan, et al. · IEEE Transactions on Electron Devices · 12
Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection
2021 · Yu-Lin Tsai, Ting-Chang Chang, et al. · IEEE Transactions on Device and Materials Reliability · 12
Enhancement of Surface Chemical and Physical Properties of Germanium–Sulfur Thin Film Using a Water‐Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique
2018 · Chih‐Cheng Yang, Po‐Hsun Chen, et al. · Advanced Materials Interfaces · 12
Performance Improvement by Enhancing Passivation Layer of p-Type GaN High-Electron Mobility Transistors With Supercritical Oxygen Treatment
2022 · Sheng-Yao Chou, Pei-Yu Wu, et al. · IEEE Electron Device Letters · 10
Abnormal Hump and Two-Step Degradation of Top Gate a-InGaZnO TFTs Under Positive Bias Stress
2022 · Bo-Shen Huang, Ting-Chang Chang, et al. · IEEE Transactions on Electron Devices · 10
Channel migration of dual channel a-InGaZnO TFTs under negative bias illumination stress
2023 · Han-Yu Chang, Ting-Chang Chang, et al. · Applied Physics Letters · 9
Impact of electrode thermal conductivity on high resistance state level in HfO 2 -based RRAM
2020 · Shih-Kai Lin, Cheng-Hsien Wu, et al. · Journal of Physics D Applied Physics · 9
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Reductive Degradation of 1,1,1-Trichloroethane with Alkaline Green Tea/Ferrous Ion in Aqueous Phase
2020 · Siang Chen Wu, Jen-Wei Huang, et al. · Industrial & Engineering Chemistry Research · 8
Investigation of HCD- and NBTI-Induced Ultralow Electric Field GIDL in 14-nm Technology Node FinFETs
2020 · Fong-Min Ciou, Jui-Tse Hsu, et al. · IEEE Transactions on Electron Devices · 7
Works count: 56
Citation count: 634
H-index: 14
I10-index: 21
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