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Yian Yin
Observed names:
Yi-An Yin,
Yi-an Yin,
YiAn Yin,
Yin Yian,
Yin, Yian,
Yi‐An Yin,
Yi’an Yin
show all 7
Institutions:
State Key Laboratory of Chemical Resource Engineering,
Beijing University of Chemical Technology
Observed institutions:
South China Normal University,
Xiamen University,
Key Laboratory of Guangdong Province,
Department of Education of Guangdong Province,
State Key Laboratory of Chemical Resource Engineering,
Beijing University of Chemical Technology
show all 6
ORCID:
0000-0002-9157-0388
Observed ORCID:
0000-0002-9157-0388
OpenAlex ID:
A5013977389
Ultrafast, superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire
2014
·
Xingfu Wang
, Yong Zhang
, et al.
·
Nanoscale
·
127
Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer
2012
·
Taiping Lu
, Shuti Li
, et al.
·
Applied Physics Letters
·
81
Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer
2012
·
Yun-Yan Zhang
, Xue-Liang Zhu
, et al.
·
IEEE Electron Device Letters
·
40
Investigation of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with AlInGaN/AlInGaN Superlattice Electron Blocking Layer
2019
·
Ximeng Chen
, Yi’an Yin
, et al.
·
Journal of Electronic Materials
·
30
The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer
2011
·
Tai-Ping Lu
, Shu-Ti Li
, et al.
·
Chinese Physics B
·
29
The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (111) substrate
2010
·
Jianxing Cao
, Shuti Li
, et al.
·
Journal of Crystal Growth
·
28
Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers
2012
·
Yun-Yan Zhang
, Guang-Han Fan
, et al.
·
Optics Express
·
23
Study of InGaN/GaN Light Emitting Diodes With Step-Graded Electron Blocking Layer
2014
·
Chao Liu
, Zhiwei Ren
, et al.
·
IEEE Photonics Technology Letters
·
22
Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers
2012
·
Le-Juan Wu
, Shu-Ti Li
, et al.
·
Chinese Physics B
·
22
PDF
Blue InGaN light-emitting diodes with dip-shaped quantum wells
2011
·
Tai-Ping Lu
, Shu-Ti Li
, et al.
·
Chinese Physics B
·
22
PDF
Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer
2012
·
Chao Liu
, Taiping Lu
, et al.
·
IEEE Photonics Technology Letters
·
20
Investigations on deep ultraviolet light-emitting diodes with quaternary AlInGaN streamlined quantum barriers for reducing polarization effect
2020
·
Kai Li
, Ni Zeng
, et al.
·
Superlattices and Microstructures
·
17
Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes
2011
·
Taiping Lu
, Shuti Li
, et al.
·
Optics Express
·
17
Regulating the Assembly of γ-Cyclodextrin Host and Polyoxometalate-Based Guests toward Light-Responsive Hybrid Rotaxanes
2025
·
Wu-Ji Chen
, Chun-Yan Liu
, et al.
·
Journal of the American Chemical Society
·
16
Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer
2016
·
Ping Qin
, Wei-Dong Song
, et al.
·
Chinese Physics B
·
16
Ultraviolet light-emitting diodes with polarization-doped p-type layer
2016
·
Wenxiao Hu
, Ping Qin
, et al.
·
Superlattices and Microstructures
·
14
Asymmetric modification of Anderson-type polyoxometalates towards organic–inorganic homo- and hetero-cluster oligomers
2022
·
Meng-Meng Zhang
, Yi-An Yin
, et al.
·
Inorganic Chemistry Frontiers
·
13
Tailoring the hole concentration in superlattices based on nitride alloys
2009
·
Qing-Hong Zheng
, Yi-An Yin
, et al.
·
Applied Physics Letters
·
13
Supramolecular assembly of covalently modified Anderson-type polyoxometalates and crown ethers towards pseudo -rotaxane structures
2024
·
Yi-An Yin
, Wu-Ji Chen
, et al.
·
Polyoxometalates
·
12
Influence of a p-InGaN/GaN short-period superlattice on the performance of GaN-based light-emitting diodes
2009
·
Shuti Li
, Qibao Wu
, et al.
·
Semiconductor Science and Technology
·
12
Improvement of Output Power of AlGaN-Based Ultraviolet Light Emitting Diodes with Sawtooth Barriers
2019
·
Dunnian Wang
, Yian Yin
, et al.
·
Journal of Electronic Materials
·
9
Modulating the Supramolecular Assembly of α‐Cyclodextrin and Anderson‐type Polyoxometalate through Covalent Modifications
2024
·
Chun‐Yan Liu
, Yun‐Jing Mu
, et al.
·
Chemistry - A European Journal
·
8
PDF
Manipulating the supramolecular assembly of γ-cyclodextrin and Anderson polyoxometalate hybrids through variations in remote functionality
2024
·
Yi-An Yin
, Wu-Ji Chen
, et al.
·
Cell Reports Physical Science
·
8
Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer
2013
·
Chao Liu
, Zhi-Wei Ren
, et al.
·
Chinese Physics B
·
7
AlGaN/GaN HEMTs with a magnetron-sputtered AlN buffer layer
2023
·
Chunxiao Zhao
, Ni Zeng
, et al.
·
Microelectronics Journal
·
6
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Works count:
37
Citation count:
640
H-index:
15
I10-index:
20
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