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Teng Ma
Observed name:
T. Ma
Institution:
China Electronic Product Reliability and Environmental Test Institute
Observed institution:
China Electronic Product Reliability and Environmental Test Institute
ORCID:
0009-0005-4453-5669
Observed ORCIDs:
0009-0005-4453-5669,
0000-0001-7989-9802
OpenAlex ID:
A5014506235
Single-event burnout in β -Ga2O3 Schottky barrier diode induced by high-energy proton
2024
·
Xing Li
, Weibo Jiang
, et al.
·
Applied Physics Letters
·
22
Radiation effects of 5 MeV proton on Ni/β-Ga2O3 Schottky barrier diodes
2024
·
Hao Chen
, Leidang Zhou
, et al.
·
APL Materials
·
18
Single-event burnout in β-Ga2O3 Schottky barrier diode induced by heavy ion irradiation
2025
·
Teng Ma
, Xing Li
, et al.
·
Applied Physics Letters
·
8
The mechanism of single-event burnout in NiO/ β -Ga2O3 heterojunction diodes under atmospheric neutron irradiation
2026
·
Silei Zhong
, Jiajun Li
, et al.
·
Applied Physics Letters
·
7
Atmospheric neutron-induced single-event burnout in β -Ga2O3 Schottky barrier diode
2025
·
Xing Li
, Weibo Jiang
, et al.
·
Applied Physics Letters
·
6
Investigation of Electrical Performance Degradation of β-Ga2O3 Schottky Barrier Diodes Induced by X-Ray and Neutron Irradiation
2025
·
Pengfei Zhao
, Xu Tan
, et al.
·
Electronics
·
6
Trap-mediated current transport in tunneling layer of Ni/Al2O3/β-Ga2O3 diodes: effect of proton irradiation
2026
·
Yushan Song
, Leidang Zhou
, et al.
·
Applied Surface Science
·
4
Enhanced UV photodetection in SnO2 microwire arrays (MWAs) thin films by γ-ray irradiation
2024
·
Zhuan Zhao
, Weilong Chen
, et al.
·
Applied Surface Science
·
4
Heavy-ion-induced degradation mechanisms and supercritical fluid recovery dynamics in Al2O3/ β -Ga2O3 metal-oxide-semiconductor capacitors
2026
·
Puyu Zhai
, Yushan Song
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
3
Comprehensive Study of Proton and Heavy Ion-Induced Damages for Cascode GaN-Based HEMTs
2025
·
Huixiang Huang
, Zhipeng Wu
, et al.
·
Electronics
·
2
PDF
Effect of Cosmic Rays on the Failure Rate of Flexible Direct Current Converter Valves in High-Altitude Environment
2024
·
Liu Yang
, Zezhao Zhang
, et al.
·
Electronics
·
2
Numerical demonstration of low-reflective wire grid polarizers with a patterned Fe 2 O 3 absorptive layer
2022
·
Zhuan Zhao
, Teng Ma
, et al.
·
Applied Optics
·
2
Temperature Optimized β-Ga 2 O 3 Solar-Blind Ultraviolet Photodetectors Fabricated by PLD for Communication and Imaging Applications
2026
·
Tao Xiao
, Zhifeng Lei
, et al.
·
ACS Applied Electronic Materials
·
1
The impact of defect evolution on the electrical performance of AlGaN/GaN HEMT after 14-MeV neutron irradiation
2025
·
Baiwei Chen
, Chuan Liao
, et al.
·
Applied Physics Letters
·
1
Compact and efficient wire grid reflecting polarizersat 121.6 nm
2022
·
Zhuan Zhao
, Teng Ma
, et al.
·
Physica Scripta
·
1
Proton radiation effects on hydrogen-terminated diamond field-effect transistors
2026
·
Yang Liu
, Xing Li
, et al.
·
Applied Physics Letters
Demonstration of robust single-event and total ionizing dose tolerance in 6-in. GaN-on-sapphire HEMTs
2026
·
C. Zou
, F. Zhou
, et al.
·
Applied Physics Letters
Radiation effects of heavy ions in hydrogen-terminated diamond field-effect transistors
2026
·
Yang Liu
, Xing Li
, et al.
·
Applied Physics Letters
Two-regime degradation associated with carrier compensation and structural instability in NiO/ β -Ga2O3 heterojunction diodes under 1864 MeV Ta-ion irradiation
2026
·
Xing Li
, Silei Zhong
, et al.
·
Applied Physics Letters
Performance Degradation of Gallium oxide SolarBlind Photodetectors Under Ta Ion Irradiation
2025
·
Tao Xiao
, Zhifeng Lei
, et al.
·
International Conference on System Reliability and Safety Engineering (SRSE)
Study on Atmospheric Neutron Single Event Effect of 650 V Silicon Carbide Diode
2025
·
Hong Zhang
, Teng Ma
·
Journal of Physics Conference Series
Research and Hardening Exploration on Single Event Burnout of 900-V SiC MOSFET Based on Californium Source
2025
·
Hong Zhang
, Teng Ma
·
Lecture notes in electrical engineering
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Works count:
23
Citation count:
90
H-index:
6
I10-index:
2
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