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Shailesh Kumar Khamari

Observed names: S K Khamari, S. K. Khamari, Shailesh K Khamari, Shailesh K. Khamari, Shailesh Khamari, Shailesh. K. Khamari
ORCID: 0000-0001-8993-5440
Observed ORCID: 0000-0001-8993-5440
OpenAlex ID: A5014517494
Effect of 60Co γ-ray irradiation on electrical properties of GaAs epilayer and GaAs p–i–n diode
2010 · Shailesh K. Khamari, V.K. Dixit, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 32
Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al x Ga1−x As/GaAs quantum wells by magneto-photoluminescence
2017 · S. Haldar, V. K. Dixit, et al. · Scientific Reports · 31
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Dislocation-assisted tunnelling of charge carriers across the Schottky barrier on the hydride vapour phase epitaxy grown GaN
2015 · Abhishek Chatterjee, Shailesh K. Khamari, et al. · Journal of Applied Physics · 22
Effect of high dose γ-ray irradiation on GaAs p-i-n photodetectors
2015 · V.K. Dixit, Shailesh K. Khamari, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 22
Effect of γ-ray irradiation on breakdown voltage, ideality factor, dark current and series resistance of GaAs p–i–n diode
2012 · Vinu R.V. Pillai, Shailesh K. Khamari, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 22
Investigation of crystalline and electronic band alignment properties of GaP/Ge(111) heterostructure
2014 · V. K. Dixit, Shailendra Kumar, et al. · Applied Physics Letters · 18
Role of threading dislocations and point defects in the performance of GaN-based metal-semiconductor-metal ultraviolet photodetectors
2020 · Abhishek Chatterjee, Shailesh K. Khamari, et al. · Superlattices and Microstructures · 16
Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors
2018 · Abhishek Chatterjee, V. K. Agnihotri, et al. · Journal of Applied Physics · 16
Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors
2018 · Abhishek Chatterjee, Shailesh K. Khamari, et al. · Journal of Applied Physics · 15
Power and Efficiency Scaling of GaAs-Based Edge-Emitting High-Power Diode Lasers
2024 · Paul Crump, Anisuzzaman Boni, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 14
Role of ZrO2 Passivation Layer Thickness in the Fabrication of High‐Responsivity GaN Ultraviolet Photodetectors
2019 · Abhishek Chatterjee, Shailesh K. Khamari, et al. · physica status solidi (RRL) - Rapid Research Letters · 12
A spin-optoelectronic detector for the simultaneous measurement of the degree of circular polarization and intensity of a laser beam
2015 · Shailesh K. Khamari, S. Porwal, et al. · Applied Physics Letters · 11
Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers
2015 · Abhishek Chatterjee, Shailesh K. Khamari, et al. · Applied Physics Letters · 11
Temperature dependence of the photo-induced inverse spin Hall effect in Au/InP hybrid structures
2014 · Shailesh K. Khamari, S. Porwal, et al. · Applied Physics Letters · 11
Carrier density non-pinning at stripe edges and widened lateral far field due to longitudinal temperature variation in broad-area high power diode lasers
2023 · S. K. Khamari, S. Arslan, et al. · Applied Physics Letters · 10
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Evaluation of structural and microscopic properties of tetragonal ZrO 2 for the facet coating of 980 nm semiconductor laser diodes
2015 · V K Dixit, A Marathe, et al. · Journal of Physics D Applied Physics · 10
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Numerical simulation of inverse spin Hall spectra in Pt/GaAs hybrid structure
2011 · Shailesh K Khamari, V K Dixit, et al. · Journal of Physics D Applied Physics · 10
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Conduction band offset and quantum states probed by capacitance–voltage measurements for InP/GaAs type-II ultrathin quantum wells
2011 · S. D. Singh, V. K. Dixit, et al. · Journal of Applied Physics · 8
Detection of optically injected spin polarized electrons in the L-valley of AlGaAs through polarization resolved photoluminescence excitation spectroscopy
2019 · Shailesh K. Khamari, P. Mudi, et al. · Journal of Luminescence · 7
Evaluation of electronic transport properties and conduction band offsets of asymmetric InAs/InxGa1−xAs/GaAs dot-in-well structures
2012 · V K Dixit, Shailesh K Khamari, et al. · Journal of Physics D Applied Physics · 6
Role of Hot Electrons in the Development of GaAs‐Based Spin Hall Devices with Low Power Consumption
2020 · Priyabrata Mudi, Shailesh K. Khamari, et al. · physica status solidi (RRL) - Rapid Research Letters · 5
Theoretical prediction and experimental demonstration of inter-valley scattering induced Inverse Spin Hall effect for hot electrons in GaAs
2019 · Priyabrata Mudi, Shailesh K. Khamari, et al. · Journal of Applied Physics · 5
Temperature dependent spin Hall conductivity in n-GaAs epitaxial layers measured by inverse spin Hall effect
2018 · Shailesh K. Khamari, S. Porwal, et al. · Journal of Applied Physics · 4
Signature of linear-in- k Dresselhaus splitting in the spin relaxation of X -valley electrons in indirect band gap AlGaAs
2021 · Priyabrata Mudi, Shailesh K. Khamari, et al. · Physical review. B./Physical review. B · 3
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Prediction of inverse spin Hall devices based on the direct injection of carriers in L- valley of GaAs
2021 · Priyabrata Mudi, Shailesh K Khamari, et al. · Journal of Physics D Applied Physics · 3
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Works count: 46
Citation count: 336
H-index: 11
I10-index: 17
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