Author

M. Lazab

Institution: Université IBN Khaldoun Tiaret

Observed institutions: Université IBN Khaldoun Tiaret, Université Djilali de Sidi Bel Abbès

OpenAlex ID: A5014722648

Mechanical and dynamical stability, electronic and bonding properties of a new narrow-gap semiconductor YPdAs Half-Heusler: DFT and QTAIM study

2024 · M. Lazab, B. Djebour, et al. · Materials Science in Semiconductor Processing · 9

First-principles calculations of the band ordering conversion in the LaxSc2−xRuPb compounds

2018 · M. Khirat, M. Lazab, et al. · Solid State Communications · 6

Works count: 2

Citation count: 15

H-index: 2

I10-index: