Author

Andrei I. Titov

Observed names: A I Titov, A. I. Titov, A. Titov, A.I. TITOV, A.I. Titov, Andrei Titov, Andrey I. Titov, Titov A. I., Titov, Andrei, А.И. Титов

Institution: Peter the Great St. Petersburg Polytechnic University

Observed institutions: Australian National University, Peter the Great St. Petersburg Polytechnic University, University of Salford, St. Petersburg State Technological Institute

ORCID: 0000-0003-4933-9534

Observed ORCID: 0000-0003-4933-9534

OpenAlex ID: A5014797626

Effect of ion species on the accumulation of ion-beam damage in GaN

2001 · S. O. Kucheyev, J. S. Williams, et al. · Physical review. B, Condensed matter · 125

Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

2022 · A.I. Titov, K.V. Karabeshkin, et al. · Vacuum · 59

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Effect of the density of collision cascades on ion implantation damage in ZnO

2007 · A. Yu. Azarov, S. O. Kucheyev, et al. · Journal of Applied Physics · 43

Effect of the density of collision cascades on implantation damage in GaN

2001 · S. O. Kucheyev, J. S. Williams, et al. · Applied Physics Letters · 39

Energy spike effects in ion-bombarded GaN

2009 · S O Kucheyev, A Yu Azarov, et al. · Journal of Physics D Applied Physics · 36

Mechanism for the molecular effect in Si bombarded with clusters of light atoms

2006 · A. Titov, A. Azarov, et al. · Physical Review B · 36

Phonons in Hexagonal InN. Experiment and Theory

1999 · V.Yu. Davydov, A.A. Klochikhin, et al. · physica status solidi (b) · 32

Defect accumulation during room temperature N+ irradiation of silicon

1996 · A.I. Titov, G. Carter · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 32

In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation

2017 · Ashish Kumar, R. Singh, et al. · Journal of Applied Physics · 31

Interplay of the disorder and strain in gallium oxide

2022 · Alexander Azarov, Vishnukanthan Venkatachalapathy, et al. · Scientific Reports · 29

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Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions

2001 · A. I. Titov, S. O. Kucheyev, et al. · Journal of Applied Physics · 28

The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductors

1980 · N.A.G. Ahmed, C.E. Christodoulides, et al. · Nuclear Instruments and Methods · 28

Damage buildup and the molecular effect in Si bombarded with PF cluster ions

2007 · A.I. Titov, A.Yu. Azarov, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 24

Atomistic simulation of damage production by atomic and molecular ion irradiation in GaN

2012 · M. W. Ullah, A. Kuronen, et al. · Journal of Applied Physics · 23

Structural damage in ZnO bombarded by heavy ions

2009 · A.Yu. Azarov, A.I. Titov, et al. · Vacuum · 23

Model for electrical isolation of GaN by light-ion bombardment

2002 · A. I. Titov, S. O. Kucheyev · Journal of Applied Physics · 23

Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature

2002 · S.O. Kucheyev, J.S. Williams, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 22

Influence of ion irradiation on internal residual stress in DLC films

2010 · Platon A. Karaseov, Oleg A. Podsvirov, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 21

The depth distribution of disorder produced by room temperature 40 keV N+ion irradiation of silicon

1979 · A. I. Titov, C. E. Christodoulides, et al. · Radiation Effects · 21

Model for radiation damage buildup in GaN

2011 · A.I. Titov, P.A. Karaseov, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 20

Density of displacement cascades for cluster ions: An algorithm of calculation and the influence on damage formation in ZnO and GaN

2009 · P. A. Karaseov, A. Yu. Azarov, et al. · Semiconductors · 19

Formation of surface amorphous layers in semiconductors under low-energy light-ion irradiation: Experiment and theory

2003 · A.I. Titov, V.S. Belyakov, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 19

Ion beam induced amorphous–crystalline phase transition in Si: Quantitative approach

2000 · Andrei I. Titov, Sergei O. Kucheyev · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 19

Effect of pre-existing disorder on surface amorphization in GaN

2010 · A. Yu. Azarov, A. I. Titov, et al. · Journal of Applied Physics · 18

Effect of collision cascade density on radiation damage in SiC

2009 · A.Yu. Azarov, A.I. Titov, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 15

Works count: 107

Citation count: 1,131

H-index: 20

I10-index: 42