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A. A. Studna

Observed names: A. A. STUDNA, A.A. Studna
OpenAlex ID: A5015224960
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
1983 · D. E. Aspnes, A. A. Studna · Physical review. B, Condensed matter · 4,047
High Precision Scanning Ellipsometer
1975 · D. E. Aspnes, A. A. Studna · Applied Optics · 650
Schottky-Barrier Electroreflectance: Application to GaAs
1973 · D. E. Aspnes, A. A. Studna · Physical review. B, Solid state · 593
Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAs
1988 · D. E. Aspnes, J. P. Harbison, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 508
Anisotropies in the Above—Band-Gap Optical Spectra of Cubic Semiconductors
1985 · D. E. Aspnes, A. A. Studna · Physical Review Letters · 426
Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eV
1984 · D. E. Aspnes, A. A. Studna, et al. · Physical review. B, Condensed matter · 330
Chemical etching and cleaning procedures for Si, Ge, and some III-V compound semiconductors
1981 · D. E. Aspnes, A. A. Studna · Applied Physics Letters · 228
Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)
1987 · D. E. Aspnes, J. P. Harbison, et al. · Physical Review Letters · 211
Kinetic Limits of Monolayer Growth on (001) Gaas by Organometallic Chemical-vapor Deposition
1988 · D. E. Aspnes, E. Colas, et al. · Physical Review Letters · 133
Methods for drift stabilization and photomultiplier linearization for photometric ellipsometers and polarimeters
1978 · D. E. Aspnes, A. A. Studna · Review of Scientific Instruments · 123
Optical Properties of GaAs and Its Electrochemically Grown Anodic Oxide from 1.5 to 6.0 eV
1981 · D. E. Aspnes, G. P. Schwartz, et al. · Journal of The Electrochemical Society · 113
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Direct optical measurement of surface dielectric responses: Interrupted growth on (001) GaAs
1990 · D. E. Aspnes, Y. C. Chang, et al. · Physical Review Letters · 107
Reflectance-difference spectroscopy system for real-time measurements of crystal growth
1988 · D. E. Aspnes, J. P. Harbison, et al. · Applied Physics Letters · 106
Oscillations in the optical response of (001)GaAs and AlGaAs surfaces during crystal growth by molecular beam epitaxy
1988 · J. P. Harbison, D. E. Aspnes, et al. · Applied Physics Letters · 100
Optical properties of anodically grown native oxides on some Ga-V compounds from 1.5 to 6.0 eV
1977 · D. E. Aspnes, B. Schwartz, et al. · Journal of Applied Physics · 81
Low-retardance fused-quartz window for real-time optical applications in ultrahigh vacuum
1989 · A. A. Studna, D. E. Aspnes, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 74
Direct observation of the E0 and E0 + Δ0 transitions in silicon
1972 · D.E. Aspnes, A.A. Studna · Solid State Communications · 74
Reflectance–difference studies of organometallic chemical vapor deposition growth transients on (001) GaAs
1989 · D. E. Aspnes, R. Bhat, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 65
An investigation of ion-bombarded and annealed 〈111〉 surfaces of Ge by spectroscopic ellipsometry
1980 · D.E. Aspnes, A.A. Studna · Surface Science · 58
Optical studies of molecular-beam epitaxy growth of GaAs and AlAs
1988 · D. E. Aspnes, J. P. Harbison, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 56
Reflectance–difference spectroscopy of (110) GaAs and InP
1987 · D. E. Aspnes, A. A. Studna · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 45
In situ monitoring of crystal growth by reflectance difference spectroscopy
1991 · E. Colas, D.E. Aspnes, et al. · Journal of Crystal Growth · 41
Stability of (100)GaAs surfaces in aqueous solutions
1985 · D. E. Aspnes, A. A. Studna · Applied Physics Letters · 33
Geometrically Exact Ellipsometer Alignment
1971 · D. E. Aspnes, A. A. Studna · Applied Optics · 29
Reflectance-difference studies of organometallic chemical-vapor-deposition growth transients on (001) GaAs
1989 · E. Colas, D.E. Aspnes, et al. · Journal of Crystal Growth · 28
Works count: 52
Citation count: 8,490
H-index: 25
I10-index: 37
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