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J. L. Hurd

Blanket and Local Crystallographic Texture Determination in Layered Al Metallization
1995 · K. P. Rodbell, J. L. Hurd, et al. · MRS Proceedings · 21
Linewidth and underlayer influence on texture in submicrometer-wide Al and AlCu lines
1998 · J. L. Hurd, K. P. Rodbell, et al. · Applied Physics Letters · 19
Filament Materials for Edge‐Supported Pulling of Silicon Sheet Crystals
1982 · T. F. Ciszek, J. L. Hurd, et al. · Journal of The Electrochemical Society · 19
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Local Texture and Electromigration in Fine Line Microelectronic Aluminum Metallization
1994 · J. L. Hurd, K. P. Rodbell, et al. · MRS Proceedings · 17
Semicontinuous edge-supported pulling of silicon sheets
1982 · J.L. Hurd, T.F. Ciszek · Journal of Crystal Growth · 12
Electron channeling and EBIC studies of edge-supported pulling silicon sheets
1984 · Y.S. Tsuo, J.L. Hurd, et al. · IEEE Transactions on Electron Devices · 9
Curved crystal lattice in resolidified submicron Al lines
1997 · M. J. C. van den Homberg, P. F. A. Alkemade, et al. · Applied Physics Letters · 7
Control of the Microstructure of Al Metallization by Graphoepitaxy
1995 · Marc J.C. Van Den Homberg, P.F.A. Alkemade, et al. · MRS Proceedings · 7
Polycrystalline hexagonal boron nitride films on SiO2 for III–V semiconductor applications
1989 · J. L. Hurd, D. L. Perry, et al. · Journal of materials research/Pratt's guide to venture capital sources · 7
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Melt growth of silicon sheets by edge-supported pulling
1980 · T.F. Ciszek, J. L. Hurd · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · 6
Silicon sheet bicrystal growth for the study of grain boundary effects in solar cells
1984 · T.F. Ciszek, S.J. Hogan, et al. · Journal of Crystal Growth · 5
Fabrication of submicron single-crystalline and bamboo A1 lines by recrystallization
1997 · M.J.C. van den Homberg, P.F.A. Alkemade, et al. · Microelectronic Engineering · 4
Growth and properties of CuInSe2 crystals from hydrothermal solution
1984 · J.L. Hurd, T.F. Ciszek · Journal of Crystal Growth · 4
A novel low temperature CVD/PVD Al filling process for producing highly reliable 0.175 μm wiring/0.35 μm pitch dual damascene interconnections in gigabit scale DRAMs
2002 · L.A. Clevenger, G. Costrini, et al. · IEEE International Interconnect Technology Conference (IITC) · 3
The microstructure of submicrometer wide planar-reactive ion etched versus trench-damascene AlCu lines
2000 · K. P. Rodbell, L. M. Gignac, et al. · Journal of Applied Physics · 3
Electromigration in aluminum damascene lines
1999 · R. F. Schnabel, R. Filippi, et al. · AIP conference proceedings · 2
Investigation of Crucible Materials in Gradient Freeze Gallium Arsenide Crystal Growth
1987 · J. L. Hurd · eScholarship (California Digital Library) · 1
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Growth of silicon sheets from metallurgical-grade silicon
1981 · T.F. Ciszek, M. Schietzelt, et al. · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · 1
Contiguous capillary coating of silicon on porous carbon substrates
1980 · T.F. Ciszek, J. L. Hurd · Conference record of the IEEE Photovoltaic Specialists Conference · 1
Dendritic Growth Failure of a Mesa Diode
1997 · P. Singh, V. Cozzolino, et al. · Proceedings - International Symposium for Testing and Failure Analysis
High-purity silicon crystal growth investigations
1985 · T.F. Ciszek, T. Schuyler, et al. · NASA Technical Reports Server (NASA)
Works count: 21
Citation count: 148
H-index: 7
I10-index: 5
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