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Benyounes Bouazza

Observed names: B Bouazza, B. BOUAZZA, B. Bouazza, BOUAZZA Benyounes, Benyounesse Bouazza, Bouazza B, Bouazza Benyounes
Observed institution: University of Abou Bekr Belkaïd
OpenAlex ID: A5015534799
Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor
2016 · Fatima Zohra Rahou, A. Guen Bouazza, et al. · Journal of Nano- and Electronic Physics · 10
Steady-State and Transient Electron Transport within Bulk InAs, InP and GaAs: An Updated Semiclassical Three-Valley Monte Carlo Simulation Analysis
2013 · A. Guen-Bouazza, C. Sayah, et al. · Journal of Modern Physics · 10
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Side effects in InAlN/GaN high electron mobility transistors
2015 · Z. Kourdi, B. Bouazza, et al. · Microelectronic Engineering · 9
Crosstalk noise and signal propagation delay analysis in submicron CMOS integrated circuits
2012 · Ahlam Guen Bouazza, Benyounes Bouazza · International Conference on Sciences of Electronics, Technologies of Information and Telecommunications · 9
3D Simulation of Fin Geometry influence on Corner effect in Multifin Dual and Tri-gate SOI-FinFETs
2014 · A.N. Moulai Khatir, A. Guen-Bouazza, et al. · TELKOMNIKA Indonesian Journal of Electrical Engineering · 8
Performance Improvement of Pi-gate SOI MOSFET Transistor using High- k Dielectric with Metal Gate
2015 · Fatima Zohra Rahou, A. Guen Bouazza, et al. · IETE Journal of Research · 7
3D Simulation of Fin Geometry Influence on Corner Effect in Multifin Dual and Tri-Gate SOI-Finfets.
2013 · Moulai Khatir AN, Guen-Bouazza A, et al. · International Journal of Nano Studies & Technology · 6
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Ensemble Monte Carlo analysis of subpicosecond transient electron transport in cubic and hexagonal silicon carbide for high power SiC-MESFET devices
2015 · Youcef Belhadji, Benyounes Bouazza, et al. · International Journal of Modern Physics B · 3
Modulation of drain current as a function of energies substrate for InP HEMT devices
2018 · S. Derrouiche, B. Bouazza, et al. · Journal of Semiconductors · 2
Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure
2018 · Amine Mohammed Taberkit, Ahlam Guen-Bouazza, et al. · International Journal of Electrical and Computer Engineering (IJECE) · 2
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Reducing the Source Resistance of an HEMT Based on InAs0.3P0.7 by Increasing the Holes Concentration for THz Applications
2018 · Derrouiche Soufiane, Bouazza Benyounes, et al. · Journal of Nanoelectronics and Optoelectronics · 2
Electron transport characteristics in 4H-SIC polytype under high-electric-field
2017 · Youcef Belhadji, Benyounes Bouazza, et al. · International Conference on Electrical Engineering - Boumerdes (ICEE-B) · 2
3D-NUMERICAL SIMULATION OF NANOSCALE Pi GATE SOI N- MOSFET TRANSISTOR WITH HIGH-k DIELECTRIC AND GRDUAL DOPING OF THE CHANNEL
2014 · Fatima Zohra Rahou, A. Guen Bouazza, et al. · European Scientific Journal ESJ · 2
Microactuator modeling to develop a new template for the Braille
2014 · Sofiane Soulimane, Med El Amine Brixi Nigassa, et al. · International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) · 2
Comparison of High Field Electron Transport in GaAs, InAs and In0.3Ga0.7As
2013 · B. Bouazza, A. Guen-Bouazza, et al. · Journal of Modern Physics · 2
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Study of electron transport in n-type InAs substrate by Monte Carlo Simulation
2005 · B Bouazza, A Guen-Bouazza, et al. · Afrique Science Revue Internationale des Sciences et Technologie · 2
Improving InP High Electron Mobility Transistor Performance by an Inserting Blocking Diode for Terahertz Applications
2018 · Derrouiche Soufiane, Bouazza Benyounes, et al. · Sensor Letters · 1
Study the Electronic Transport Properties for InAs0.3P0.7 the First Derived Substrate from InP via Monte Carlo Methods
2018 · Soufiane Derrouiche, Benyounes Bouazza, et al. · Journal of Electronic Materials · 1
Characterization of the Absence of Polar and Inter-valley Scattering Mechanisms from Charge-Carrier Energy Curves for “In0.53Ga0.47As” Using Monte Carlo Simulation
2018 · Soufiane Derrouiche, Benyounes Bouazza, et al. · Transactions on Electrical and Electronic Materials · 1
Side Effects in a HEMT Performance with InAlN/GaN
2015 · Z. Kourdi, B. Bouazza, et al. · Indonesian Journal of Electrical Engineering and Computer Science · 1
Side Effects in a HEMT Performance with InAlN/GaN
2015 · Z. Kourdi, B. Bouazza, et al. · TELKOMNIKA Indonesian Journal of Electrical Engineering · 1
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Semi Classical Three-Valley Monte Carlo Simulation Analysis Of Steady-State And Transient Electron Transport Within Bulk Ga0.38In0.62P
2012 · N. Massoum, B. Bouazza, et al. · Zenodo (CERN European Organization for Nuclear Research) · 1
Steady State and Transient Study of The Electron Transport In N-Type GaSb Using Three Valley Monte Carlo Model
2012 · Youcef Belhadji, B. Bouazza · Dépôt Institutionnel de lUniversité de Tlemcen · 1
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Effect of the temperature and doping on electron transport in AlxGa1−xN alloy by monte carlo method
2010 · N Bachir, A Hamdoune, et al. · IOP Conference Series Materials Science and Engineering · 1
Oxide growth retardation induced by rapid thermal annealing in Czochralsky-grown silicon consequence on the efficiency and the stability of internal gettering of Cr
2000 · N.E Chabane-Sari, B Bouazza, et al. · Microelectronic Engineering · 1
Works count: 60
Citation count: 87
H-index: 6
I10-index: 2
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