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Hyodong Ban

Observed name: Ban, Hyodong
OpenAlex ID: A5016851332
A 16-Gb T-Coil-Based GDDR6 DRAM With Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus Achieving 27-Gb/s/Pin in NRZ
2022 · Daewoong Lee, Jaehyeok Baek, et al. · IEEE Journal of Solid-State Circuits · 18
13.6 A 16Gb 37Gb/s GDDR7 DRAM with PAM3-Optimized TRX Equalization and ZQ Calibration
2024 · Sung-Yong Cho, Moon-Chul Choi, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 16
A 16Gb 27Gb/s/pin T-coil based GDDR6 DRAM with Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus
2022 · Daewoong Lee, Hye-Jung Kwon, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 15
Investigation on NBTI Control Techniques of HKMG Transistors for Low-power DRAM applications
2023 · Won Ju Sung, Hyun Seung Kim, et al. · IEEE International Reliability Physics Symposium proceedings · 11
A 16-Gb 37-Gb/s GDDR7 DRAM With PAM3-Optimized TRX Equalization and ZQ Calibration
2024 · Sung-Yong Cho, Moon-Chul Choi, et al. · IEEE Journal of Solid-State Circuits · 9
14nm DRAM Development and Manufacturing
2023 · Kanguk Kim, Youngwoo Son, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 9
Analysis of Intermittent Single-bit Failure on 10-nm node generation DRAM Devices
2023 · Hyewon Seo, Taiuk Rim, et al. · IEEE International Reliability Physics Symposium proceedings · 6
Gate oxide technology relieving word-line break in 10 nm-class DRAMs
2024 · Dongkyu Jang, Taehoon Park, et al. · Japanese Journal of Applied Physics · 4
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Improvement of VRT immunity using low 10-boron word line in recent DRAM
2024 · Dongkyu Jang, Daekyum Kim, et al. · Microelectronics Reliability · 4
Interface Engineering of Trench-Ox for Modern DRAM Devices
2024 · Soojung Hwang, Jongkyu Kim, et al. · IEEE International Reliability Physics Symposium proceedings · 3
Machine learning investigation of high-k metal gate processes for dynamic random access memory peripheral transistor
2024 · Namyong Kwon, JoonHo Bang, et al. · APL Materials · 2
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Enhanced DRAM Single Bit Characteristics from Process Control of Chlorine
2023 · Taiuk Rim, Kyosuk Che, et al. · IEEE International Reliability Physics Symposium proceedings · 2
Anomaly Classification and Key Segment Detection in Semiconductor Manufacturing Processes Using Image-Based Siamese Networks
2024 · Jung In Kim, Chunghyup Mok, et al. · Journal of Korean Institute of Industrial Engineers · 1
Stress-induced leakage current comparison of giga-bit scale DRAM capacitors with OCS (one-cylinder-storage) node
2002 · Donggun Park, Hyodong Ban, et al. · IEEE International Integrated Reliability Workshop final report · 1
Improved Row Hammer and Passing Gate Effect Properties With Impurity Reduction of TiN Single Metal Word-Line in Modern DRAM
2026 · Dongkyu Jang, Sangkwan Kim, et al. · IEEE Access
Laser annealing technology for storage node contact in 10 nm class DRAM
2025 · Dongkyu Jang, Jieun Lee, et al. · Japanese Journal of Applied Physics
Folded bit-line technology for bank-edge in 10 nm 5th-generation DRAM
2025 · Dongkyu Jang, Chanho Park, et al. · Japanese Journal of Applied Physics
Folded bit-line technology for bank-edge in 10nm 5th-generation DRAMs
2025 · Taehoon Park, Chanho Park, et al. · International Conference on Solid State Devices and Materials (SSDM)
A novel solution to alleviate bit-line break and roughness in 10nm-class high-k metal gate DRAM
2025 · Jieun Lee, Taehoon Kim, et al. · International Conference on Solid State Devices and Materials (SSDM)
Laser annealing technology for storage node contact in graphic DRAMs
2025 · Dongkyu Jang, Jieun Lee, et al. · International Conference on Solid State Devices and Materials (SSDM)
Study on the Measurement Method of Interface Resistance in HBM-DRAM: Novel Monitoring Method for Bump Contact Resistance
2025 · Sanghyeon Jeon, Ilgeun Jung, et al. · IEEE International Reliability Physics Symposium proceedings
Gate Oxide Technology Relieving Word-line Break in 10 nm-class DRAM
2024 · Taehoon Park, Dongkyu Jang, et al. · International Conference on Solid State Devices and Materials (SSDM)
Comprehensive analysis of Intermittent Single-bit Failure in 10 nm-class DRAM
2024 · Jieun Lee, Donkyu Jang, et al. · International Conference on Solid State Devices and Materials (SSDM)
Voltage Free Failure Analysis of Sub-15nm DRAM Gate Insulator Breakdown based on Thermal Laser Stimulation
2023 · Chae Soo Kim, Bohyeon Jeon, et al. · Proceedings - International Symposium for Testing and Failure Analysis
Works count: 25
Citation count: 101
H-index: 6
I10-index: 4
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