Author

Toyoyasu Tadokoro

Observed names: T. Tadokoro, Toyoyasu TADOKORO

Institution: Kochi University of Technology

Observed institutions: Kochi University of Technology, Nippon Seiki (Japan), Niigata University, Nagaoka University of Technology

OpenAlex ID: A5016892752

Bandgap engineering of α-(AlxGa1-x)2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard's Law

2018 · G. T. Dang, T. Yasuoka, et al. · Applied Physics Letters · 94

Cathodoluminescence image of defects and luminescence centers in ZnS/GaAs(100)

1996 · Tadashi Mitsui, Naoki Yamamoto, et al. · Journal of Applied Physics · 72

Growth and characterization of CdS epilayers on (100)GaAs by atomic layer epitaxy

1993 · Toyoyasu Tadokoro, Shin-ichi Ohta, et al. · Journal of Crystal Growth · 44

Analysis of Carrier Traps in Continuously Operated 4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl/tris(8-hydroxyquinoline)aluminum-Based Organic Light-Emitting Diodes by Thermally Stimulated Current Measurement

2007 · Makoto Nakahara, Masahiro Minagawa, et al. · Japanese Journal of Applied Physics · 18

Correlation between cathodoluminescence and structural defects inZnS/GaAs(100) andZnS/eGaAs(100) studied by transmission electron microscopy

1996 · Tadashi Mitsui, Naoki Yamamoto, et al. · Applied Surface Science · 14

Growth and characterization of (CdS)4(ZnS)16 superlattices

1993 · Toyoyasu Tadokoro, Shin-ichi Ohta, et al. · Journal of Crystal Growth · 14

Organic light emitting diodes with nanostructured ultrathin layers at the interface between electron- and hole-transport layers

2004 · Keizo Kato, Kazuki Takahashi, et al. · Current Applied Physics · 12

Atomic layer epitaxy growth of ZnS on (100)GaAs using molecular beam epitaxy system

1995 · Toyoyasu Tadokoro, Shin-ichi Ohta, et al. · Journal of Crystal Growth · 10

Low-voltage-driven a.c. thin film electroluminescent cell containing a ZnS:Mn film deposited by molecular beam epitaxy

1988 · Shin-ichi Ohta, Toyoyasu Tadokoro, et al. · Thin Solid Films · 8

Organic Light-Emitting Diodes with a Nanostructured Fullerene Layer at the Interface between Alq3and TPD Layers

2003 · Keizo Kato, Keisuke Suzuki, et al. · Japanese Journal of Applied Physics · 5

Effects of Mn effusion cell temperature on the film properties and on the AC electroluminescence of molecular beam deposited ZnS:Mn

1990 · Shin-ichi Ohta, Toyoyasu Tadokoro, et al. · Journal of Luminescence · 3

Organic Light Emitting Diodes with a Nanostructured Fullerene Layer at the Interface between Alq3 and TPD Layers

2002 · Keizo Kato, Keisuke Suzuki, et al. · International Conference on Solid State Devices and Materials (SSDM)

Electrical and emitting properties of organic electroluminescent diodes with nanostructured cathode buffer-layers of Al/Alq3 ultrathin films

2002 · Kazunari Shinbo, Eigo Sakai, et al. · IEICE Transactions on Electronics

Nano-Structure Control of Cathode Buffer-Layers and Luminescent Properties of Organic Electroluminescent Device

2001 · K. Shinbo, E. Sakai, et al. · MRS Proceedings

Characterization of (CdS)4/(ZnS)16 Superlattices using Cathodoluminescence Method

1994 · Toyoyasu TADOKORO, Shin-ichi OHTA, et al. · Elsevier eBooks

High Contrast Thin Film Electroluminescent Device

1987 · Meiso Yokoyama, Toyoyasu Tadokoro, et al. · SAE technical papers on CD-ROM/SAE technical paper series

High Contrast Thin Film Electroluminescent Deyice with a GaAs Absorption Layer

1986 · Meiso Yokoyama, Toyoyasu Tadokoro, et al. · SAE technical papers on CD-ROM/SAE technical paper series

Works count: 17

Citation count: 294

H-index: 8

I10-index: 8