Get started
Author

Thiago H. Both

Observed names: Both, Thiago Hanna, T. H. Both, T.H. Both, Thiago Both, Thiago Hanna Both
Institution: NXP (Netherlands)
ORCID: 0000-0003-0016-1894
Observed ORCID: 0000-0003-0016-1894
OpenAlex ID: A5017100276
Modeling and simulation of the charge trapping component of BTI and RTS
2017 · Thiago Hanna Both, Gabriela Firpo Furtado, et al. · Microelectronics Reliability · 22
Design Flow Methodology for Radiation Hardened by Design CMOS Enclosed-Layout-Transistor-Based Standard-Cell Library
2018 · Pablo Ilha Vaz, Thiago Hanna Both, et al. · Journal of Electronic Testing · 16
Random Telegraph Noise Modeling for Circuit Analysis: RTN in Ring Oscillators
2022 · Mauricio Banaszeski da Silva, Thiago H. Both, et al. · IEEE Journal of the Electron Devices Society · 13
PDF
Statistical analysis of the impact of charge traps in p-type MOSFETs via particle-based Monte Carlo device simulations
2020 · Alan C. J. Rossetto, Vinicius V. A. Camargo, et al. · Journal of Computational Electronics · 12
Autocorrelation Analysis as a Technique to Study Physical Mechanisms of MOSFET Low-Frequency Noise
2017 · Thiago H. Both, Jeroen A. Croon, et al. · IEEE Transactions on Electron Devices · 11
The effects of total ionizing dose on the neutron SEU cross section of a 130 nm 4 Mb SRAM memory
2014 · Evaldo Carlos Fonseca Pereira, Odair Lelis Goncalez, et al. · 9
TID effects on I–V characteristics of bulk CMOS STD and ELT-based devices in 600 nm
2020 · Pablo I. Vaz, Gilson I. Wirth, et al. · Microelectronics Journal · 4
An Overview on Statistical Modeling of Random Telegraph Noise in the Frequency Domain
2020 · Thiago H. Both, Maurício Banaszeski da Silva, et al. · Springer eBooks · 4
A Compact Statistical Model for the Low-Frequency Noise in Halo-Implanted MOSFETs: Large RTN Induced by Halo Implants
2019 · Mauricio Banaszeski da Silva, Thiago H. Both, et al. · IEEE Transactions on Electron Devices · 4
Towards 500GHz fMAX 140nm SiGe BiCMOS Technology for 5G/6G Applications
2024 · J.P. John, J. Kirchgessner, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) · 3
Unified Compact Modeling of Charge Trapping in 1/f Noise, RTN and BTI
2021 · Gilson Wirth, Mauricio B. da Silva, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 3
An Analytical Gate Delay Variability Model for Low-Power Applications under the Process Variations Effects
2023 · Caroline Pinheiro Garcia, Thiago Hanna Both · Journal of Integrated Circuits and Systems · 2
PDF
Towards Unifying the Statistical Modeling of Charge Trapping in Time and Frequency Domain
2021 · Gilson Wirth, Mauricio B. da Silva, et al. · 2
A compact model for BTI simulation under cyclo-stationary conditions
2017 · Thiago Hanna Both, Gabriela Firpo Furtado, et al. · Symposium on Microelectronics Technology and Devices · 2
Deterministic Methodology for Electrical Simulation of BTI Induced Pulse Broadening
2017 · Gabriela Firpo Furtado, Thiago H. Both, et al. · IEEE Transactions on Device and Materials Reliability · 2
1/f noise simulation in MOSFETs under cyclo-stationary conditions using SPICE simulator
2014 · Thiago H. Both, Gilson I. Wirth, et al. · Journal of Computational Electronics · 2
Aging and voltage scaling impacts under neutron-induced soft error rate in SRAM-based FPGAs
2014 · Fernanda Lima Kastensmidt, Jorge Tonfat, et al. · Proceedings/Proceedings - European Test Workshop · 2
Analysis of Total Ionizing Dose Effects on a Pseudo-Static Random Access Memory (PSRAM)
2012 · T. H. Both, Gilson I. Wirth, et al. · ECS Transactions · 2
PDF
Statistical Modeling of Timing Variability Due to Random Telegraph Noise in Logic Gates
2025 · Gilson I. Wirth, Thiago H. Both, et al. · Fluctuation and Noise Letters · 1
An Analytical Gate Delay Variability Model for Low-Power and Low-Voltage Applications
2022 · Caroline P. Garcia, Thiago H. Both · 1
Gate Delay Variability due to Random Telegraph Noise
2021 · Rodolfo G. Barbosa, Thiago H. Both, et al. · Symposium on Microelectronics Technology and Devices · 1
Evaluation of Non-Series-Parallel Structures for BTI-Aware Automated Design Methodologies
2020 · Henrique Kessler, Plínio Finkenauer, et al. · IEEE International Symposium on Circuits and Systems proceedings · 1
A variability-based analysis technique revealing physical mechanisms of MOSFET low-frequency noise
2017 · Thiago H. Both, Jeroen A. Croon, et al. · 1
Measurements of radiation effects on a 4 Mb PSRAM memory
2014 · Odair Lelis Gonçalez, Evaldo Carlos Fonseca Pereira Junior, et al. · AIP conference proceedings · 1
Analysis of Total Ionizing Dose Effects on 0.13µm Technology-Temperature-Compensated Voltage References
2013 · Thiago Hanna Both, Dalton Colombo, et al. · Journal of Aerospace Technology and Management · 1
PDF
Works count: 37
Citation count: 125
H-index: 6
I10-index: 5
Year
Topic
Type