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Emil I. Kolev
Observed names:
E. Kolev,
Emil Kolev
Institution:
University of California, Berkeley
Observed institutions:
Northwestern University,
University of California, Santa Barbara,
Tsinghua–Berkeley Shenzhen Institute,
SDL (United States),
University of the Philippines Diliman,
University of California, Berkeley
show all 6
OpenAlex ID:
A5017138346
InGaP/InGaAsP/GaAs 0.808 /spl mu/m separate confinement laser diodes grown by metalorganic chemical vapor deposition
1994
·
J. Diaz
, I. Eliashevich
, et al.
·
IEEE Photonics Technology Letters
·
38
High-power and diffraction-limited red lasers
2000
·
Bardia Pezeshki
, Mats Hagberg
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
28
400-mW single-frequency 660-nm semiconductor laser
1999
·
B. Pezeshki
, M. Hagberg
, et al.
·
IEEE Photonics Technology Letters
·
28
Optimized structure for InGaAsP/GaAs 808 nm high power lasers
1995
·
H. J. Yi
, J. Diaz
, et al.
·
Applied Physics Letters
·
22
High-power InGaAsP/GaAs 0.8-μm laser diodes and peculiarities of operational characteristics
1994
·
J. Diaz
, I. Eliashevich
, et al.
·
Applied Physics Letters
·
14
Very high power 1.48 µm semiconductor lasers
1999
·
A. Mathur
, M. Fisher
, et al.
·
Electronics Letters
·
7
Efficiency of photoluminescence and excess carrier confinement in InGaAsP/GaAs structures prepared by metal-organic chemical-vapor deposition
1994
·
J. Diaz
, H. J. Yi
, et al.
·
Journal of Applied Physics
·
6
GaInAsP/InP 1.35 μm double heterostructure laser grown on silicon substrate by metalorganic chemical vapor deposition
1993
·
K. Mobarhan
, C. Jelen
, et al.
·
Journal of Applied Physics
·
6
High power 1.3 µm DFB lasers
1998
·
A. Mathur
, M. Ziari
, et al.
·
Electronics Letters
·
4
90 mW 660 nm distributed feedback lasers
1999
·
M. Hagberg
, B. Pezeshki
, et al.
·
Electronics Letters
·
2
Air-Cavity Dominated HCG-VCSEL with a Wide Continuous Tuning
2018
·
Jonas Kapraun
, Jipeng Qi
, et al.
·
Conference on Lasers and Electro-Optics
·
1
Peculiarities of operation characteristics of high-power InGaAsP/GaAs 0.8 μm laser diodes
2002
·
M. Razeghi
, J. Diaz
, et al.
·
IEEE International Semiconductor Laser Conference (ISLC)
·
1
GaInAsP/GaAs for high-power pumping laser
1994
·
Manijeh Razeghi
, X. G. He
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
1
Optical, Electrical, and Structural Characterization of GaInAsP/InP Layers Grown on Silicon Substrate for 1.35 μm Laser Applications
1992
·
K. Mobarhan
, C. Jelen
, et al.
·
MRS Proceedings
·
1
Buried Tunnel Junction VCSEL with High Contrast Grating Top Reflector
2019
·
Jonas Kapraun
, Jiaxing Wang
, et al.
·
Compound Semiconductor Week (CSW)
Precise Two-step Growth of 940-nm VCSEL on a GaAsP-capped DBR Wafer
2018
·
Jiaxing Wang
, Jonas Kapraun
, et al.
·
Conference on Lasers and Electro-Optics
High power and short wavelength red DFB lasers
2002
·
B. Pezeshki
, M. Hagberg
, et al.
·
IEEE International Semiconductor Laser Conference (ISLC)
Grating-based red lasers
1999
·
Bardia Pezeshki
, Mats Hagberg
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
17:30 - 19130 TuE25 High Power and Short Wavelength Red DFB lasers
1998
·
B. Pezeshki
, Mats Hagberg
, et al.
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Works count:
19
Citation count:
159
H-index:
6
I10-index:
5
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