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Nadim Chowdhury

Observed names: Chowdhury, Nadim, N Chowdhury
ORCID: 0000-0002-3677-4556
Observed ORCID: 0000-0002-3677-4556
OpenAlex ID: A5017235448
The 2018 GaN power electronics roadmap
2018 · H Amano, Y Baines, et al. · Journal of Physics D Applied Physics · 1,365
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Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
2021 · Koon Hoo Teo, Yuhao Zhang, et al. · Journal of Applied Physics · 341
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Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices
2020 · Samuel James Bader, Hyunjea Lee, et al. · IEEE Transactions on Electron Devices · 179
Materials and processing issues in vertical GaN power electronics
2017 · Jie Hu, Yuhao Zhang, et al. · Materials Science in Semiconductor Processing · 177
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p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si
2019 · Nadim Chowdhury, Jori Lemettinen, et al. · IEEE Electron Device Letters · 162
Regrowth-Free GaN-Based Complementary Logic on a Si Substrate
2020 · Nadim Chowdhury, Qingyun Xie, et al. · IEEE Electron Device Letters · 149
Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit
2018 · Yuhao Zhang, Min Sun, et al. · IEEE Electron Device Letters · 143
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720-V/0.35-m $\Omega \cdot$ cm2Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers
2018 · Yuhao Zhang, Mengyang Yuan, et al. · IEEE Electron Device Letters · 105
GaN Nanowire n-MOSFET With 5 nm Channel Length for Applications in Digital Electronics
2017 · Nadim Chowdhury, Giuseppe Iannaccone, et al. · IEEE Electron Device Letters · 63
Self-Aligned E-Mode GaN p -Channel FinFET With ION > 100 mA/mm and ION/IOFF > 10⁷
2022 · Nadim Chowdhury, Qingyun Xie, et al. · IEEE Electron Device Letters · 58
Tungsten-Gated GaN/AlGaN p-FET With Imax > 120 mA/mm on GaN-on-Si
2022 · Nadim Chowdhury, Qingyun Xie, et al. · IEEE Electron Device Letters · 54
First Demonstration of a Self-Aligned GaN p-FET
2019 · Nadim Chowdhury, Qingyun Xie, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 53
Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation
2023 · Mengyang Yuan, John Niroula, et al. · IEEE Electron Device Letters · 50
Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm
2019 · Jori Lemettinen, Nadim Chowdhury, et al. · IEEE Electron Device Letters · 48
Field-induced Acceptor Ionization in Enhancement-mode GaN p-MOSFETs
2020 · Nadim Chowdhury, Qingyun Xie, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 47
Highly Scaled GaN Complementary Technology on a Silicon Substrate
2023 · Qingyun Xie, Mengyang Yuan, et al. · IEEE Transactions on Electron Devices · 43
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GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform
2022 · Mengyang Yuan, Qingyun Xie, et al. · IEEE Electron Device Letters · 43
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Barrier heights and Fermi level pinning in metal contacts on p-type GaN
2020 · Sumaiya Wahid, Nadim Chowdhury, et al. · Applied Physics Letters · 40
Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High on Current
2014 · Nadim Chowdhury, S. M. Farhaduzzaman Azad, et al. · ECS Transactions · 31
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High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C
2024 · John Niroula, Qingyun Xie, et al. · Applied Physics Letters · 30
High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology
2022 · Mengyang Yuan, Qingyun Xie, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 30
Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform
2022 · Qingyun Xie, Mengyang Yuan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 24
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GaN Memory Operational at 300 °C
2022 · Mengyang Yuan, Qingyun Xie, et al. · IEEE Electron Device Letters · 24
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Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments
2024 · Qingyun Xie, John Niroula, et al. · Applied Physics Letters · 23
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Structural, dielectric and magnetic properties of Ta-substituted Bi0.8La0.2FeO3 multiferroics
2014 · Takian Fakhrul, Rubayyat Mahbub, et al. · Journal of Alloys and Compounds · 20
Works count: 66
Citation count: 3,439
H-index: 23
I10-index: 32
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