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Moritz N. L. Hansemann
Observed names:
M. Hansemann,
M. N. L. Hansemann
Institutions:
Paul Drude Institute for Solid State Electronics,
Forschungsverbund Berlin
Observed institutions:
Paul Drude Institute for Solid State Electronics,
Forschungsverbund Berlin,
Technische Universität Berlin
ORCID:
0000-0003-3891-9744
Observed ORCID:
0000-0003-3891-9744
OpenAlex ID:
A5018212166
Atomically resolved study of initial stages of hydrogen etching and adsorption on GaAs(110)
2022
·
D. S. Rosenzweig
, M. N. L. Hansemann
, et al.
·
Physical Review Materials
·
2
Competition between α -FeGe2 formation and germanium grain nucleation during solid phase epitaxy on GaAs(001)
2026
·
Moritz N. L. Hansemann
, Michael Hanke
, et al.
·
AIP Advances
PDF
STM simulation of high aspect ratio tunneling behavior on the example of in situ harvested GaAs nanowire
2022
·
Moritz N. L. Hansemann
, D. Rosenzweig
, et al.
·
Compound Semiconductor Week (CSW)
GaAs(110) Surface Modifications Introduced by Hydrogen
2022
·
D.S. Rosenzweig
, M. Hansemann
, et al.
·
Compound Semiconductor Week (CSW)
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Works count:
4
Citation count:
2
H-index:
1
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