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Toshikazu Irisawa

Observed names: Irisawa, Toshikazu, T. Irisawa, Toshikazu IRISAWA, 入澤 寿和, 入澤寿和
ORCID: 0009-0006-6192-6239
Observed ORCID: 0009-0006-6192-6239
OpenAlex ID: A5018570223
Probing of Polarization Reversal in Ferroelectric (Al,Sc)N Films Using Single‐ and Tri‐Layered Structures With Different Sc/(Al+Sc) Ratio
2024 · Shinnosuke Yasuoka, Takao Shimizu, et al. · Advanced Materials Interfaces · 12
High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films
2024 · Nana Sun, Kazuki Okamoto, et al. · Applied Physics Letters · 12
Effect of H2 heat treatment on the switching behavior of ferroelectric AlScN capacitors
2025 · Nana Sun, Kazuki Okamoto, et al. · APL Materials · 6
Thickness Scaling of Integrated Pt/(Al 0.9 Sc 0.1 )N/Pt Capacitor Stacks to 30 nm
2025 · Soshun Doko, Naoko Matsui, et al. · Advanced Electronic Materials · 2
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Thickness Dependence of Ferroelectricity for Thin (Al0.9Sc0.1)N-based FeRAM
2024 · Soshun Doko, Naoko Matsui, et al. · IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) · 1
Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy
2018 · N. Tezuka, S. Oikawa, et al. · AIP Advances · 1
Report on the 186th Seminar of Sputtering and Plasma Process (SP) Division
2026 · Junjun JIA, Toshikazu IRISAWA · Vacuum and Surface Science
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Bottom Electrode Crystallinity-Driven Enhancement of Switching Behavior in Scaled (Al0.9Sc0.1)N Films
2026 · Nana Sun, Soshun Doko, et al. · ACS Applied Electronic Materials
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40 nm-thick Pt/(Al0.9Sc0.1)N/Pt ferroelectric capacitor stacks for logic-embedded memory on 300 mm Si with wafer-scale uniformity and process stability
2026 · Soshun Doko, Naoko Matsui, et al. · Microelectronic Engineering
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Thickness Scaling of Integrated Pt/(Al 0.9 Sc 0.1 )N/Pt Capacitor Stacks to 30 nm (Adv. Electron. Mater. 1/2026)
2026 · Soshun Doko, Naoko Matsui, et al. · Advanced Electronic Materials
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FeRAM向け (Al,Sc)N膜における強誘電特性の膜厚依存性評価
2025 · 道古宗俊, Soshun Doko, et al. · Tokyo Tech Research Repository (Tokyo Institute of Technology)
Stable ferroelectric property at high temperature under nydrogen gas in (Al, Sc)N thin films
2025 · Nana Sun, 岡本 一輝, et al. · Institutional Repositories DataBase (IRDB)
High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films
2024 · Nana Sun, Kazuki Okamoto, et al. · International Conference on Solid State Devices and Materials (SSDM)
Report on the 177th Seminar of Division of Sputtering and Plasma Process
2024 · Toshikazu IRISAWA · Vacuum and Surface Science
Bias voltage and temperature dependence of magnetoresistance ratio in low resistance magnetic tunnel junctions with perpendicular magnetization
2016 · Sogo Oikawa, Nobuki Tezuka, et al. · The Japan Society of Applied Physics
W針先端の原子配列とFe/W針からの電界放出電子のスピン偏極度
· Irisawa, Toshikazu · Institutional Repositories DataBase (IRDB)
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Works count: 31
Citation count: 34
H-index: 3
I10-index: 2
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