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Xinglong Ji

Observed names: Ji, X., Ji, Xinglong, X L Ji, X. Ji, X. L. Ji, Xing-Long Ji, Xinglong JI, Xingtian Ji
Observed institutions: Shihezi University, McGovern Institute for Brain Research, Singapore University of Technology and Design, Liaoning Shihua University, State Grid Corporation of China (China), Chinese Academy of Sciences, Lanzhou Institute of Chemical Physics, Shanghai Institute of Microsystem and Information Technology, University of Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, State Key Laboratory of Solid Lubrication, State Grid Shandong Electric Power Company (China), École Polytechnique Fédérale de Lausanne, Technical University of Munich, Tsinghua University
ORCID: 0000-0002-8116-7974
Observed ORCID: 0000-0002-8116-7974
OpenAlex ID: A5018677369
One order of magnitude faster phase change at reduced power in Ti-Sb-Te
2014 · Min Zhu, Mengjiao Xia, et al. · Nature Communications · 237
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Phase‐Change Memory Materials by Design: A Strain Engineering Approach
2016 · Xilin Zhou, Janne Kalikka, et al. · Advanced Materials · 146
Highly Compact Artificial Memristive Neuron with Low Energy Consumption
2018 · Yishu Zhang, Wei He, et al. · Small · 117
Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications
2014 · Min Zhu, Liangcai Wu, et al. · Applied Physics Letters · 102
Artificial Perception Built on Memristive System: Visual, Auditory, and Tactile Sensations
2019 · Xinglong Ji, Xinyu Zhao, et al. · Advanced Intelligent Systems · 96
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A Monolayer Leaky Integrate‐and‐Fire Neuron for 2D Memristive Neuromorphic Networks
2020 · Song Hao, Xinglong Ji, et al. · Advanced Electronic Materials · 92
Floating solid-state thin films with dynamic structural colour
2021 · Zhiyuan Yan, Zheng Zhang, et al. · Nature Nanotechnology · 69
Biodegradable and Flexible Resistive Memory for Transient Electronics
2018 · Xinglong Ji, Li Song, et al. · The Journal of Physical Chemistry C · 68
Efficient Design of Spiking Neural Network With STDP Learning Based on Fast CORDIC
2021 · Jiajun Wu, Yi Zhan, et al. · IEEE Transactions on Circuits and Systems I Regular Papers · 63
A candidate Zr-doped Sb2Te alloy for phase change memory application
2016 · Yonghui Zheng, Yan Cheng, et al. · Applied Physics Letters · 63
Titanium-induced structure modification for thermal stability enhancement of a GeTeTi phase change material
2015 · Xinglong Ji, Liangcai Wu, et al. · RSC Advances · 57
The development of general-purpose brain-inspired computing
2024 · Weihao Zhang, Songchen Ma, et al. · Nature Electronics · 53
Monolayer MoS2/WO3 Heterostructures with Sulfur Anion Reservoirs as Electronic Synapses for Neuromorphic Computing
2021 · Song Hao, Xinglong Ji, et al. · ACS Applied Nano Materials · 51
SiC‐Doped Ge 2 Sb 2 Te 5 Phase‐Change Material: A Candidate for High‐Density Embedded Memory Application
2018 · Tianqi Guo, Sannian Song, et al. · Advanced Electronic Materials · 38
Carbon doping induced Ge local structure change in as-deposited Ge2Sb2Te5 film by EXAFS and Raman spectrum
2018 · Tao Li, Liangcai Wu, et al. · AIP Advances · 33
Super Nonlinear Electrodeposition–Diffusion-Controlled Thin-Film Selector
2018 · Xinglong Ji, Li Song, et al. · ACS Applied Materials & Interfaces · 32
Temperature and concentration dependent crystallization behavior of Ge 2 Sb 2 Te 5 phase change films: tungsten doping effects
2014 · Shuang Guo, Zhigao Hu, et al. · RSC Advances · 32
Emulating dynamic synaptic plasticity over broad timescales with memristive device
2018 · Yishu Zhang, Shuai Zhong, et al. · Applied Physics Letters · 29
Enabling Transient Electronics with Degradation on Demand via Light-Responsive Encapsulation of a Hydrogel–Oxide Bilayer
2018 · Shuai Zhong, Xinglong Ji, et al. · ACS Applied Materials & Interfaces · 29
Advantage of Ti-Doped Ge2Sb2Te5 Material for Phase Change Memory Applications
2015 · L. Cao, X. Ji, et al. · ECS Solid State Letters · 25
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CrxSb2Te1 materials for phase change memory with high speed and good thermal stability performance
2015 · Qing Wang, Bo Liu, et al. · Journal of Materials Science Materials in Electronics · 25
Intrinsic evolutions of dielectric function and electronic transition in tungsten doping Ge2Sb2Te5 phase change films discovered by ellipsometry at elevated temperatures
2015 · S. Guo, X. J. Ding, et al. · Applied Physics Letters · 25
Tunable Resistive Switching Enabled by Malleable Redox Reaction in the Nano-Vacuum Gap
2019 · Xinglong Ji, Chao Wang, et al. · ACS Applied Materials & Interfaces · 23
High thermal stable and fast switching Ni-Ge-Te alloy for phase change memory applications
2015 · Liangliang Cao, Liangcai Wu, et al. · Applied Physics Letters · 23
Vanadium doped Sb2Te3 material with modified crystallization mechanism for phase-change memory application
2015 · Xinglong Ji, Liangcai Wu, et al. · Applied Physics Letters · 23
Works count: 66
Citation count: 1,839
H-index: 23
I10-index: 37
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