Get started
Author

Xin Tan

Observed names: TAN Xin, Tan Xin, X. Tan, Xin Kun Tan
ORCID: 0000-0003-2609-3172
Observed ORCID: 0000-0003-2609-3172
OpenAlex ID: A5018783368
Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2
2018 · Yuanjie Lv, Xingye Zhou, et al. · IEEE Electron Device Letters · 114
High-Voltage ($\overline{\text{2}}01$ ) $\beta$ -Ga2O3 Vertical Schottky Barrier Diode With Thermally-Oxidized Termination
2019 · Yuangang Wang, Shujun Cai, et al. · IEEE Electron Device Letters · 87
Experimental investigation of enhancement of carbon dioxide foam stability, pore plugging, and oil recovery in the presence of silica nanoparticles
2018 · Abdul Rahim Risal, Muhammad A. Manan, et al. · Petroleum Science · 78
PDF
Large-Area 4H-SiC Ultraviolet Avalanche Photodiodes Based on Variable-Temperature Reflow Technique
2018 · Xingye Zhou, Tingting Han, et al. · IEEE Electron Device Letters · 37
Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs
2018 · Yuanjie Lv, Jianghui Mo, et al. · Superlattices and Microstructures · 35
Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V
2019 · Yuanjie Lü, Xubo Song, et al. · Journal of Semiconductors · 25
PDF
High performance AlGaN/GaN pressure sensor with a Wheatstone bridge circuit
2019 · Xin Tan, Yuanjie Lv, et al. · Microelectronic Engineering · 22
$8\times8$ 4H-SiC Ultraviolet Avalanche Photodiode Arrays With High Uniformity
2019 · Xingye Zhou, Zhihong Feng, et al. · IEEE Electron Device Letters · 22
Dynamic Characteristics of AlGaN/GaN Fin-MISHEMTs With Al2O3Dielectric
2018 · Xingye Zhou, Xin Tan, et al. · IEEE Transactions on Electron Devices · 19
Simulation study of GaN-based HFETs with graded AlGaN barrier
2015 · Xingye Zhou, Zhihong Feng, et al. · Solid-State Electronics · 16
Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs
2023 · Cheng-hao Yu, Hao-min Guo, et al. · Microelectronics Reliability · 15
High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area
2019 · Xingye Zhou, Xin Tan, et al. · Chinese Optics Letters · 14
Impact of Resistance on the Performance of Ultraviolet 4H-SiC Avalanche Photodiodes
2020 · Xingye Zhou, Xin Tan, et al. · IEEE Transactions on Electron Devices · 13
AlGaN/GaN pressure sensor with a Wheatstone bridge structure
2018 · X. Tan, Y. J. Lv, et al. · AIP Advances · 12
PDF
Microscopic model of nano-scale particles removal in high pressure CO2-based solvents
2009 · Jiajue Chai, Xiaogang Zhang, et al. · The Journal of Supercritical Fluids · 12
128-pixel arrays of 4H-SiC UV APD with dual-frequency PECVD SiN x passivation
2020 · Xingye Zhou, Xin Tan, et al. · Optics Express · 11
High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition
2015 · Hong-Yu Guo, Yuan-Jie Lv, et al. · Chinese Physics Letters · 11
PDF
Excellent-Performance AlGaN/GaN Fin-MOSHEMTs with Self-Aligned Al 2 O 3 Gate Dielectric
2016 · Xin Tan, Xing-Ye Zhou, et al. · Chinese Physics Letters · 10
Single-Photon-Counting Performance of 4H-SiC Avalanche Photodiodes With a Wide-Range Incident Flux
2020 · Xingye Zhou, Xin Tan, et al. · IEEE Photonics Technology Letters · 9
Reliability Assessment of InAlN/GaN HFETs With Lifetime $8.9\times 10^{\mathrm {6}}$ h
2017 · Yuangang Wang, Yuanjie Lv, et al. · IEEE Electron Device Letters · 9
Thermal Analysis of GaN Schottky Diodes in the Terahertz Frequency Multipliers
2019 · Xubo Song, Lisen Zhang, et al. · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) · 6
Research of Single-Event Burnout in P-NiO/n-Ga 2 O 3 Heterojunction Diode
2024 · Cheng-Hao Yu, Hui Yang, et al. · IEEE Transactions on Device and Materials Reliability · 5
High‐uniformity 1 × 64 linear arrays of silicon carbide avalanche photodiode
2020 · Xingye Zhou, Xin Tan, et al. · Electronics Letters · 5
Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatment*
2020 · Xing-Ye Zhou, Xin Tan, et al. · Chinese Physics B · 4
AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications
2016 · Xubo Song, Yuanjie Lü, et al. · Journal of Semiconductors · 4
Works count: 52
Citation count: 633
H-index: 13
I10-index: 18
Year
Topic
Type