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Yoon-Seo Kim

Observed name: Yoon‐Seo Kim
ORCID: 0000-0001-8446-5523
Observed ORCID: 0000-0001-8446-5523
OpenAlex ID: A5019074246
Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook
2023 · Hye-Mi Kim, Dong-Gyu Kim, et al. · International Journal of Extreme Manufacturing · 124
Remarkable Stability Improvement with a High‐Performance PEALD‐IZO/IGZO Top‐Gate Thin‐Film Transistor via Modulating Dual‐Channel Effects
2022 · Yoon‐Seo Kim, Won‐Bum Lee, et al. · Advanced Materials Interfaces · 74
Exploration of Chemical Composition of In–Ga–Zn–O System via PEALD Technique for Optimal Physical and Electrical Properties
2023 · TaeHyun Hong, Yoon‐Seo Kim, et al. · Advanced Electronic Materials · 73
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Selectively Nitrogen Doped ALD-IGZO TFTs with Extremely High Mobility and Reliability
2023 · Dong-Gyu Kim, Hyuk Choi, et al. · ACS Applied Materials & Interfaces · 63
Reliability Engineering of High‐Mobility IGZO Transistors via Gate Insulator Heterostructures Grown by Atomic Layer Deposition
2024 · Yoon‐Seo Kim, Taewon Hwang, et al. · Advanced Materials Interfaces · 47
Impact of Annealing Temperature on Atomic Layer Deposited In–Ga–Zn–O Thin-Film Transistors
2022 · Hyun-Jun Jeong, Yoon-Seo Kim, et al. · ACS Applied Electronic Materials · 45
Approaches for 3D Integration Using Plasma‐Enhanced Atomic‐Layer‐Deposited Atomically‐Ordered InGaZnO Transistors with Ultra‐High Mobility
2023 · Yoon‐Seo Kim, Hye‐Jin Oh, et al. · Small Methods · 41
Impact of tandem IGZO/ZnON TFT with energy-band aligned structure
2020 · Yoon-Seo Kim, Hyun-Mo Lee, et al. · Applied Physics Letters · 29
Transparent Flexible High Mobility TFTs Based on ZnON Semiconductor With Dual Gate Structure
2020 · Eun-Jae Park, Hyun Mo Lee, et al. · IEEE Electron Device Letters · 29
Soft Recovery Process of Mechanically Degraded Flexible a-IGZO TFTs With Various Rolling Stresses and Defect Simulation Using TCAD Simulation
2020 · Beom-Su Kim, Hyun-Jun Jeong, et al. · IEEE Transactions on Electron Devices · 28
Sequential Design of PEALD In–Ga–Zn–O Active Layer for Enhancing TFT Stability
2023 · Hae Lin Yang, Yoon-Seo Kim, et al. · IEEE Transactions on Electron Devices · 18
Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid
2022 · Yoon-Seo Kim, Hye-Jin Oh, et al. · Scientific Reports · 17
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Reliability Improvement of High Mobility Oxide TFTs Based on Hydrogen-Resistant PEALD Al2O3 Gate Insulators Grown with N2O Plasma
2025 · Sang-Hyun Kim, Yoon-Seo Kim, et al. · ACS Applied Materials & Interfaces · 16
Control of subthreshold swing using an in situ PEALD nano-laminated IGZO/Al 2 O 3 multi-channel structured TFT
2023 · Won-Bum Lee, Yoon-Seo Kim, et al. · Journal of Information Display · 16
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Attaining quantitatively fewer defects in close-packed InGaZnO synthesized using atomic layer deposition
2024 · Yoon-Seo Kim, Hyunmin Hong, et al. · Applied Surface Science · 14
Reduction of Persistent Photoconduction with IGZO/ZnON-Tandem-Structure Visible–Near-Infrared Phototransistors
2021 · Hyun-Mo Lee, Yoon-Seo Kim, et al. · ACS Applied Materials & Interfaces · 14
Plasma-Enhanced Atomic Layer Deposition Assisted Low-Temperature Synthetic Routes to Rationally Designed Metastable c-Axis Aligned Hexagonal In-Zn-O
2023 · TaeHyun Hong, Hyeon Woo Kim, et al. · Chemistry of Materials · 13
Compositional tailoring of indium-free GZO layers via plasma-enhanced atomic layer deposition for highly stable IGZO/GZO TFT
2023 · Hye-Jin Oh, Yoon-Seo Kim, et al. · Journal of Information Display · 11
Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges
2026 · Chi-Hoon Lee, Seong-Hwan Ryu, et al. · Nano-Micro Letters · 10
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Ultra‐High Mobility Atomically‐Ordered InGaZnO Transistors Through Atomic Layer Deposition
2025 · Yoon‐Seo Kim, Hyeon Woo Kim, et al. · Advanced Electronic Materials · 10
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Unveiling growth mechanisms of PEALD In 2 O 3 thin films with amide-based versus alkyl-based novel indium precursors
2024 · Gyeong Min Jeong, Hae Lin Yang, et al. · Journal of Materials Chemistry C · 8
Towards Fully-Automated Materials Discovery via Large-Scale Synthesis Dataset and Expert-Level LLM-as-a-Judge
2025 · Heegyu Kim, Taeyang Jeon, et al. · ACM International Conference on Information and Knowledge Management (CIKM) · 4
ALD Reactivity‐Driven 2DEG‐Like Interfacial Conduction in Nanolaminate InGaZnO Transistors toward High‐Mobility and Stable Oxide Electronics
2025 · Yoon‐Seo Kim, Daejung Kim, et al. · Advanced Electronic Materials · 3
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Tailoring thin film transistor performance through plasma reactant manipulation in indium oxynitride films
2023 · Hyun-Mo Lee, Hye-Mi Kim, et al. · Journal of Materials Chemistry C · 1
The Value of ALD Oxide Semiconductor Thin Film Transistor Beyond Mobility-Reliability Trade-Off
2024 · Yoon-Seo Kim, Jin-Seong Park · Proceedings of the International Display Workshops
Works count: 27
Citation count: 708
H-index: 14
I10-index: 20
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