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Shohei Imai
Observed name:
Shohei IMAI
Institution:
Murata (Japan)
Observed institutions:
Okayama University,
Mitsubishi Electric (Japan),
Murata (Japan)
ORCID:
0000-0002-1190-5548
Observed ORCID:
0000-0002-1190-5548
OpenAlex ID:
A5019098734
Efficiency and harmonics generation in microwave to DC conversion circuits of half-wave and full-wave rectifier types
2011
·
Shohei Imai
, S. Tamaru
, et al.
·
IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications (IMWS-IWPT)
·
34
Bandwidth Optimization of Doherty Power Amplifier Based on Source Converters for 5G Mobile Handsets
2021
·
Shohei Imai
, Kenji Mukai
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
·
19
An 80-W packaged GaN high power amplifier for CW operation in the 13.75–14.5 GHz band
2014
·
Shohei Imai
, Hiroaki Maehara
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
18
32.3 A Load-Variation-Tolerant Doherty Power Amplifier with Dual-Adaptive-Bias Scheme for 5G Handsets
2024
·
Shohei Imai
, Hideyuki Sato
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
14
60% PAE, 30W X-band and 33% PAE, 100W Ku-band PAs utilizing 0.15 μm GaN HEMT technology
2016
·
Takuma Torii
, Shohei Imai
, et al.
·
European Microwave Conference (EuMC)
·
11
Dual-Adaptive Bias Scheme of Condition-Tolerant Doherty Power Amplifier for 5G Handsets
2024
·
Shohei Imai
, Kenji Mukai
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
·
10
A Bandwidth-Optimized Transformer-Based Doherty Power Amplifier for 5G Power Class 2 Handset operation at 2.2 GHz-2.7 GHz
2021
·
Shohei Imai
, Hiroshi Okabe
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
10
A Ku-band 100 W power amplifier under CW operation utilizing 0.15 µm GaN HEMT technology
2016
·
Masafumi Nagasaka
, Susumu Nakazawa
, et al.
·
Asia-Pacific Microwave Conference (APMC)
·
5
A 2.6-GHz-band 78-W Doherty power amplifier with GaN HEMT unit-cell structure robust for layout-dependent loop oscillation
2016
·
Shohei Imai
, Shinsuke Watanabe
, et al.
·
European Microwave Conference (EuMC)
·
4
Evolution of Power Amplifiers for Mobile Phone Terminals from the 2nd Generation to the 5th Generation
2022
·
Satoshi TANAKA
, Kenji MUKAI
, et al.
·
IEICE Transactions on Electronics
·
2
PDF
60% PAE, 30W X-band and 33% PAE, 100W Ku-Band PAs utilizing 0.15um GaN HEMT Technology
2016
·
Takuma Torii
, Shohei Imai
, et al.
·
IEICE Technical Report; IEICE Tech. Rep.
·
2
Enhancing the Performance and Stability of a Dual Adaptive Biased Doherty Power Amplifier for 5G Mobile Handsets
2025
·
Shohei Imai
, Ryo Ishikawa
, et al.
·
IEEE Access
·
1
A 2.6-GHz-band 78-W Doherty power amplifier with GaN HEMT unit-cell structure robust for layout-dependent loop oscillation
2016
·
Shohei Imai
, Shinsuke Watanabe
, et al.
·
European Microwave Integrated Circuits Conference
·
1
0.15μm GaNH EMT技術を用いた60%PAE,30W Xバンド33%,100W Kuバンド電力増幅器【Powered by NICT】
2016
·
Takuma Torii
, Shohei Imai
, et al.
·
IEEE Conference Proceedings
レイアウト依存性ループ振動のためのロバストなGaNH EMTユニットセル構造をもつ26GHz帯LXXVIII W Doherty電力増幅器【Powered by NICT】
2016
·
Shohei Imai
, Shinsuke Watanabe
, et al.
·
IEEE Conference Proceedings
An important relation for determining a high-efficiency RF-DC conversion circuit
2010
·
Shohei Imai
, Kazuhiro Fujimori
, et al.
·
Asia-Pacific Microwave Conference (APMC)
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Works count:
16
Citation count:
131
H-index:
7
I10-index:
7
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