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Serdar Karadeniz

Observed names: Karadeniz, Serdar, S Karadeniz, S. Karadeniz, Serdar KARADENİZ
Institution: Giresun University
ORCID: 0000-0002-1792-8134
Observed ORCID: 0000-0002-1792-8134
OpenAlex ID: A5019263987
The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes
2003 · Ş. Altındal, S. Karadeniz, et al. · Solid-State Electronics · 234
Electrical, structural and optical properties of SnO2 thin films prepared by spray pyrolysis
2005 · T. Serin, N. Serin, et al. · Journal of Non-Crystalline Solids · 138
Gaussian distribution of inhomogeneous barrier height in Ag/p-Si (100) Schottky barrier diodes
2004 · S. Acar, S. Karadeniz, et al. · Applied Surface Science · 70
Space charge-limited conduction in Ag/p-Si Schottky diode
2007 · F. Yakuphanoglu, Nihat Tugluoglu, et al. · Physica B Condensed Matter · 66
Temperature dependence of current–voltage characteristics of Ag/p-SnSe Schottky diodes
2004 · N Tuğluoğlu, S Karadeniz, et al. · Applied Surface Science · 60
The energy distribution of the interface state density of SnO2/p-Si (111) heterojunctions prepared at different substrate temperatures by spray deposition method
2004 · S. Karadeniz, N. Tuğluoğlu, et al. · Applied Surface Science · 55
Determination of the interface state density of the In/p-Si Schottky diode by conductance and capacitance–frequency characteristics
2006 · N. Tuğluoğlu, F. Yakuphanoglu, et al. · Physica B Condensed Matter · 53
Analysis of current–voltage and capacitance–voltage characteristics of perylene-monoimide/n-Si Schottky contacts
2012 · N. Tuğluoğlu, S. Karadeniz · Current Applied Physics · 52
Au/SnO2/n-Si (MOS) structures response to radiation and frequency
2003 · A. Tataroğlu, Ş. Altındal, et al. · Microelectronics Journal · 50
Temperature-dependent barrier characteristics of Ag/p-SnS Schottky barrier diodes
2004 · S Karadeniz, M ahin, et al. · Semiconductor Science and Technology · 43
Substrate temperature dependence of series resistance in Al/SnO2/p-Si (111) Schottky diodes prepared by spray deposition method
2004 · S Karadeniz, N Tuğluoğlu, et al. · Applied Surface Science · 42
Effect of series resistance on the performance of silicon Schottky diode in the presence of tin oxide layer
2004 · N. Tuğluoğlu, S. Karadeniz, et al. · Applied Surface Science · 40
Temperature-dependent barrier characteristics of Ag/p-SnSe Schottky diodes based onI–V–Tmeasurements
2004 · N Tu luo lu, S Karadeniz, et al. · Semiconductor Science and Technology · 40
Analysis of electrical properties of Al/p-Si Schottky contacts with and without rubrene layer
2013 · S. Karadeniz, B. Barış, et al. · Synthetic Metals · 37
Optical dispersion and dielectric properties of rubrene organic semiconductor thin film
2014 · Behzad Barış, Hatice Gürel Özdemir, et al. · Journal of Materials Science Materials in Electronics · 36
Analysis of temperature dependent electrical properties of Au/perylene-diimide/n-Si Schottky diodes
2013 · Ö.F. Yüksel, N. Tuğluoğlu, et al. · Thin Solid Films · 36
Temperature dependence of current–voltage characteristics of Ag/p-SnS Schottky barrier diodes
2004 · Mehmet Şahin, Haluk Şafak, et al. · Applied Surface Science · 34
Frequency dependent interface state properties of a Schottky device based on perylene-monoimide deposited on n-type silicon by spin coating technique
2013 · N. Tuğluoğlu, Ö.F. Yüksel, et al. · Materials Science in Semiconductor Processing · 33
Analysis of frequency-dependent series resistance and interface states of In/SiO2/p-Si (MIS) structures
2007 · A. Birkan Selçuk, N. Tuğluoğlu, et al. · Physica B Condensed Matter · 33
Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique
2013 · Nihat Tuğluoğlu, Behzad Barış, et al. · Journal of Alloys and Compounds · 32
Series resistance calculation for Ag contacts on single crystal layered p-SnS and p-SnSe compound semiconductors in the wide temperature range
2005 · S. Karadeniz, N. Tugˇluogˇlu, et al. · Microelectronic Engineering · 31
Dark and illuminated electrical characteristics of Schottky device with Zn-complex interface layer
2022 · S. Karadeniz, D. E. Yıldız, et al. · Journal of Materials Science Materials in Electronics · 30
Effect of gamma-ray irradiation on the electrical characteristics of Al/C 24 H 12 /p-Si nano-structure
2018 · Defne Akay, Serdar Karadeniz, et al. · Physica Scripta · 24
Novel PANI:Borophene/Si Schottky device for the sensitive detection of illumination and NaCl salt solutions
2024 · D. E. Yıldız, S. Karadeniz, et al. · Journal of Materials Science Materials in Electronics · 23
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The double Gaussian distribution of inhomogeneous barrier heights in the organic‐on‐inorganic Schottky devices
2012 · Nihat Tuğluoğlu, Ö. Faruk Yüksel, et al. · physica status solidi (a) · 22
Works count: 58
Citation count: 1,568
H-index: 23
I10-index: 36
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