Author

U. Serincan

Observed names: Serincan, Ugur, U Serincan, Ugur Serincan, Uğur SERİNCAN, Uğur Serincan, serincan, ugur

Institution: Eskisehir Technical University

Observed institutions: Anadolu University, Middle East Technical University, Eskisehir Technical University

ORCID: 0000-0002-6305-4343

Observed ORCID: 0000-0002-6305-4343

OpenAlex ID: A5019428469

Characterization of Ge nanocrystals embedded in SiO2by Raman spectroscopy

2003 · U Serincan, G Kartopu, et al. · Semiconductor Science and Technology · 61

Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

2006 · S. Yerci, U. Serincan, et al. · Journal of Applied Physics · 47

Structural and optical properties of porous nanocrystalline Ge

2008 · G. Kartopu, A. V. Sapelkin, et al. · Journal of Applied Physics · 44

Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes

2012 · Tunay Tansel, Kutlu Kutluer, et al. · IEEE Photonics Technology Letters · 29

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Mechanisms of void formation in Ge implanted SiO2 films

2003 · E.S. Marstein, A.E. Gunnæs, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 28

Can chemically etched germanium or germanium nanocrystals emit visible photoluminescence?

2005 · G. Kartopu, V. A. Karavanskii, et al. · physica status solidi (a) · 24

Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO2layers by ion implantation

2006 · M Kulakci, U Serincan, et al. · Semiconductor Science and Technology · 22

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Thermal activation energy of crystal and amorphous nano-silicon in SiO2 matrix

2008 · Jiwei Wang, Marcofabio Righini, et al. · Solid State Communications · 21

Introduction of Si∕SiO2 interface states by annealing Ge-implanted films

2004 · E. S. Marstein, A. E. Gunnæs, et al. · Journal of Applied Physics · 21

Nanocrystal and nanocluster formation and oxidation in annealed Ge-implanted SiO2 films

2002 · E.S Marstein, A.E Gunnæs, et al. · Surface and Coatings Technology · 20

Spatial distribution of light-emitting centers in Si-implanted SiO2

2004 · U. Serincan, G. Aygun, et al. · Journal of Luminescence · 19

Structural and optical characterization of GaSb on Si (001) grown by Molecular Beam Epitaxy

2019 · Uğur Serincan, Burcu Arpapay · Semiconductor Science and Technology · 17

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The quantum confined Stark effect in silicon nanocrystals

2008 · Mustafa Kulakci, Ugur Serincan, et al. · Nanotechnology · 17

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Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array

2018 · Melih Korkmaz, Bulent Arikan, et al. · Semiconductor Science and Technology · 16

Variation of photoluminescence from Si nanostructures in SiO2 matrix with Si+ post implantation

2006 · U. Serincan, M. Kulakci, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 14

Evolution of Vibrational Modes of SiO2 During the Formation of Ge and Si Nanocrystals by Ion Implantation and Magnetron Sputtering

2010 · A. Gencer Imer, S. Yerci, et al. · Journal of Nanoscience and Nanotechnology · 11

Ion beam synthesis and characterization of Ge nanoparticles in SiO2

2006 · U.V. Desnica, M. Buljan, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 11

A comparative study on GaSb epilayers grown on nominal and vicinal Si(100) substrates by molecular beam epitaxy

2020 · Burcu Arpapay, Y Eren Suyolcu, et al. · Semiconductor Science and Technology · 10

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Evolution of SiO2 matrix during the formation of Ge and Si nanocrystals by ion implantation

2005 · U. Serincan, S. Yerci, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 10

Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation

2007 · S. Yerci, I Yildiz, et al. · Journal of Applied Physics · 9

Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique

2006 · H. Karaağaç, M. Parlak, et al. · Crystal Research and Technology · 9

Direct growth of type II InAs/GaSb superlattice MWIR photodetector on GaAs substrate

2018 · Uğur Serincan, Bulent Arikan, et al. · Superlattices and Microstructures · 8

Phonon frequency variations in high quality InAs1−xSbx epilayers grown on GaAs