Author

Feng Sl

Observed name: Feng SL

OpenAlex ID: A5019556196

STUDY OF SELF-ASSEMBLED InAs QUANTUM DOTS GROWN ON LOW TEMPERATURE GaAs EPI-LAYER

2000 · Wang Xd, H Wang, et al. · SEMI-IR · 1

Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures

2000 · H Wang, Hom‐Lay Wang, et al. · SEMI-IR · 1

New way to enhance the uniformity of self-organized InAs quantum dots

1999 · Zhu Hj, H Wang, et al. · SEMI-IR · 1

Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures

2001 · Niu Zc, Wang Xd, et al. · SEMI-IR

Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy

2001 · Niu Zc, Wang Xd, et al. · SEMI-IR

The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy

2000 · Hom‐Lay Wang, Zhu Hj, et al. · SEMI-IR

The influence of growth interruption on quantum dot laser

2000 · H Wang, Hom‐Lay Wang, et al. · SEMI-IR

The effect of dopant Si on the uniformity of self-organized InAs quantum dots

1999 · Hom‐Lay Wang, Zhu Hj, et al. · SEMI-IR

Hole capture barrier of self-organized InAs quantum dots

1999 · Wang HL, Zhu HJ, et al. · SEMI-IR

Effect of carrier relaxation and emission on photoluminescence of InAs quantum dots

1999 · Zhu Hj, Wang Zm, et al. · SEMI-IR

Material transport in self-assembled InAs/GaAs quantum dot ensemble

1997 · Wang Zm, Feng Sl, et al. · SEMI-IR

Electronic investigation of self-organized InAs quantum dots

1997 · F Chen, Feng Sl, et al. · SEMI-IR

Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots

1997 · Wang Zm, Feng Sl, et al. · SEMI-IR

The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

1997 · Wang Zm, Feng Sl, et al. · SEMI-IR

Works count: 15

Citation count: 3

H-index: 1

I10-index: