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Fulong Jiang
Observed name:
Fu-Long Jiang
Institution:
Shenzhen University
Observed institutions:
Shenzhen University,
Southern University of Science and Technology,
Collaborative Innovation Center of Advanced Microstructures,
National Laboratory of Solid State Microstructures,
Nanjing University
ORCID:
0000-0003-0211-9155
Observed ORCID:
0000-0003-0211-9155
OpenAlex ID:
A5019667975
Micro-light-emitting diodes with quantum dots in display technology
2020
·
Zhaojun Liu
, Chun-Ho Lin
, et al.
·
Light Science & Applications
·
663
PDF
Analysis of size dependence and the behavior under ultrahigh current density injection condition of GaN-based Micro-LEDs with pixel size down to 3 μ m
2022
·
Yibo Liu
, Feng Feng
, et al.
·
Journal of Physics D Applied Physics
·
64
Humidity sensor based on Gallium Nitride for real time monitoring applications
2021
·
Chaudhry Muhammad Furqan
, Muhammad Umair Khan
, et al.
·
Scientific Reports
·
52
PDF
Directly Printable and Adhesive Liquid Metal Ink for Wearable Devices
2024
·
Wenfu Chen
, Qianqiang Tang
, et al.
·
Advanced Functional Materials
·
45
Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization optimization
2016
·
Tao Tao
, Ting Zhi
, et al.
·
Scientific Reports
·
34
PDF
Role of Intrinsic Surface States in Efficiency Attenuation of GaN‐Based Micro‐Light‐Emitting‐Diodes
2020
·
Fulong Jiang
, Byung-Ryool Hyun
, et al.
·
physica status solidi (RRL) - Rapid Research Letters
·
33
Ultra-bright green InGaN micro-LEDs with brightness over 10M nits
2022
·
Mengyuan Zhanghu
, Byung-Ryool Hyun
, et al.
·
Optics Express
·
25
Exploring superlattice DBR effect on a micro-LED as an electron blocking layer
2021
·
Gewei Yan
, Byung-Ryool Hyun
, et al.
·
Optics Express
·
25
Precise Extraction of Dynamic R dson Under High Frequency and High Voltage by a Double-Diode-Isolation Method
2019
·
Jianming Lei
, Rui Wang
, et al.
·
IEEE Journal of the Electron Devices Society
·
12
PDF
Role of Intrinsic Surface States in Efficiency Attenuation of GaN‐Based Micro‐Light‐Emitting‐Diodes
2021
·
Fulong Jiang
, Byung-Ryool Hyun
, et al.
·
physica status solidi (RRL) - Rapid Research Letters
·
9
ZIF-derived hierarchical porous leaf-like CoFe, N-doped carbon nanoarrays as self-supported bifunctional electrodes for rechargeable zinc-air batteries
2025
·
Xiaojing Lai
, Fei Lin
, et al.
·
Journal of Power Sources
·
8
The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement
2018
·
Fulong Jiang
, Yaying Liu
, et al.
·
IEEE photonics journal
·
7
Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy
2015
·
Zhenlong Wu
, Peng Chen
, et al.
·
Applied Surface Science
·
6
High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier
2017
·
Feng Xu
, Peng Chen
, et al.
·
Chinese Physics B
·
5
PDF
Selective area epitaxy of semipolar InGaN/GaN multiple quantum wells on GaN microfacets using crossover stripe patterns
2015
·
Zhenlong Wu
, Peng Chen
, et al.
·
Superlattices and Microstructures
·
4
Hollow Co9S8/CuCo2S4 heterostructure arrays as self-supported trifunctional electrodes for rechargeable zinc-air batteries and overall water splitting
2025
·
Yunxian Zhang
, Lingfeng Guo
, et al.
·
Journal of Alloys and Compounds
·
2
P‐7.4: Thermal Stability Analysis of Micro‐LED arrays
2019
·
Bo Lu
, Fulong Jiang
, et al.
·
SID Symposium Digest of Technical Papers
·
1
Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask
2014
·
Tao Tao
, Ting Zhi
, et al.
·
Chinese Physics B
·
1
The Manufacture and Property of Nano-Sized InGaN/GaN Light Emitting Diodes
2017
·
Zili Xie
, Tao Tao
, et al.
·
Proceedings of the International Conference of Theoretical and Applied Nanoscience and Nanotechnology
PDF
Photoluminescence Properties of InGaN/AlGaInN MQWs with LatticeMatched AlGaN/InGaN Superlattices Barrier at Highly Excited Condition
2017
·
Peng Chen
, Fulong Jiang
, et al.
·
Proceedings of the International Conference of Theoretical and Applied Nanoscience and Nanotechnology
PDF
Band Edge Emission Improvement by Energy Transfer in Hybrid III-Nitride/Organic Semiconductor Nanostructure
2016
·
Fu-Long Jiang
, Ya-Ying Liu
, et al.
·
Chinese Physics Letters
PDF
ハイブリッドIII Nitride/Organic半導体ナノ構造におけるエネルギー移動によるバンド端発光改善【Powered by NICT】
2016
·
Fulong Jiang
, Liu Yaying
, et al.
·
Chinese Physics Letters
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Works count:
22
Citation count:
995
H-index:
9
I10-index:
9
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