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Author

Mohammad Hasanuzzaman

Observed names: Hasanuzzaman, Mohammad, M. Hasanuzzaman
Institution: IBM (United States)
ORCID: 0000-0002-3195-6780
Observed ORCID: 0000-0002-3195-6780
OpenAlex ID: A5019725359
High performance 14nm SOI FinFET CMOS technology with 0.0174µm 2 embedded DRAM and 15 levels of Cu metallization
2014 · C-H. Lin, B. Greene, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 131
Mapping of the mechanical response in Si/SiGe nanosheet device geometries
2022 · Conal E. Murray, Hanfei Yan, et al. · Communications Engineering · 17
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High Performance Nanosheet Technology Optimized for 77 K
2023 · R. Bao, L. Qin, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 12
A mathematical model for void evolution in silicon by helium implantation and subsequent annealing process
2012 · Mohammad Hasanuzzaman, Yaser M. Haddara, et al. · Journal of Applied Physics · 8
Modeling germanium diffusion in Si1−xGex/Si superlattice structures
2009 · Mohammad Hasanuzzaman, Yaser M. Haddara, et al. · Journal of Applied Physics · 8
Modeling silicon–germanium interdiffusion by the vacancy exchange and interstitial mechanisms
2007 · Mohammad Hasanuzzaman, Yaser M. Haddara · Journal of Materials Science Materials in Electronics · 8
Modeling vacancy injection from the silicon/silicon-nitride interface
2007 · Mohammad Hasanuzzaman, Yaser M. Haddara · Journal of Materials Science Materials in Electronics · 8
Hot Carrier Degradation and performance boost on Si Channel nFET Gate-All-Around Nanosheet Devices
2025 · H. Zhou, M. Hasanuzzaman, et al. · IEEE International Reliability Physics Symposium proceedings · 2
Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap
2012 · Mohammad Hasanuzzaman, Yaser M. Haddara, et al. · Journal of Applied Physics · 2
Energy Band Parameters in Phosphorus Doped-Carbon/P-Silicon Solar Cell
2006 · Sharif Mominuzzaman, M. Hasanuzzaman, et al. · IEEE World Conference on Photovoltaic Energy Conference · 1
Characteristics of Pulsed Laser Deposited N-carbon /p-silicon Heterojunction
2004 · Md. Zahurul Islam, Mahbub Alam, et al. · 1
Interaction of work function tuning and negative bias temperature instability for future nodes
2017 · Luigi Pantisano, Purushothaman Srinivasan, et al. · Microelectronic Engineering
Role of a Si0.95Ge0.05 epilayer cap on boron diffusion in silicon under inert and dry oxidizing ambient annealing
2016 · Mohammad Hasanuzzaman, Yaser M. Haddara, et al. · Materials Science in Semiconductor Processing
Void Evolution and Defect Interactions in Silicon and Silicon Germanium
2012 · Hasanuzzaman, Mohammad · MacSphere (McMaster University)
Modeling Voids in Silicon
2008 · Mohammad Hasanuzzaman, Yaser M. Haddara, et al. · TechConnect Briefs
Modeling Germanium-Silicon Interdiffusion in Silicon Germanium/Silicon Super Lattice Structures
2008 · Yaser M. Haddara, Mohammad Hasanuzzaman, et al. · TechConnect Briefs
Modeling si-ge interdiffusion by a vacancy exchange mechanism
2006 · M. Hasanuzzaman, Y.M. Haddara · Conference proceedings - Canadian Conference on Electrical and Computer Engineering
Modeling Si/Ge Interdiffusion in Si/Si_1-xGe_x/Si Single Quantum Well Structures
2005 · Hasanuzzaman, Mohammad · MacSphere (McMaster University)
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Modeling of Germanium/Silicon Interdiffusion in Silicon/Silicon Germanium/Silicon Single Quantum Well Structures
2005 · Mohammad Hasanuzzaman, Yaser M. Haddara · TechConnect Briefs
Works count: 19
Citation count: 198
H-index: 7
I10-index: 3
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