Author

V. B. Ufimtsev

Observed names: V. B. UFIMTSEV, V.B. Ufimtsev, Vsevolod B. Ufimtsev

Institution: Russian Academy of Sciences

Observed institutions: Russian Academy of Sciences, Giredmet (Russia)

OpenAlex ID: A5019738001

Structure, Homogeneity and Properties of Thermoelectric Materials Based on Ternary Solid Solutions of Bismuth and Antimony Chalcogenides

1997 · V.B. Ufimtsev, V.B. Osvensky, et al. · Advanced Performance Materials · 20

Semiconductor materials for present-day solid-state electronics

2000 · M. G. Mil’vidskii, V. B. Ufimtsev · Inorganic Materials · 12

GdVO 4 crystals with Nd3+, Tm3+, Ho3+, and Er3+ions for diode-pumped microchip laser

1996 · Alexander I. Zagumennyi, Yury D. Zavartsev, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 7

Numeric simulation of vertical Bridgman growth of Cd1−xZnxTe melts

1999 · V.M. Lakeenkov, V.B. Ufimtsev, et al. · Journal of Crystal Growth · 5

A review of the book Atomy legiruyushchikh primese $$\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} $$ v poluprovodnikakh (Atoms of doping impurities in semiconductors) by V.I. Fistul’ (Moscow: Fizmatlit, 2004)

2005 · M. G. Mil’vidskii, V. B. Ufimtsev · Semiconductors · 1

Influence of growth conditions on structure, composition homogeneity and mechanical properties of thermoelectric crystals for coolers

2002 · V.T. Bublik, K.V. Karataev, et al. · International Conference on Thermoelectrics (ICT) · 1

Interaction between impurities in Bi- and Zn-doped InSb epitaxial layers

1986 · В. Г. Зиновьев, I.A. Lapkina, et al. · Inorg. Mater. (Engl. Transl.); (United States) · 1

On-Ground Refinement and Space Growth of Ge Single Crystals by FZ-Technique with the Action of Low-Induction Rotating Magnetic Fields

2001 · A. V. Kartavykh, V. B. Ufimtsev, et al.

ChemInform Abstract: Semiconductor Materials for Present‐Day Solid‐State Electronics

2000 · M. G. Mil'vidskii, V. B. Ufimtsev · ChemInform

Important problems in semiconductor technology and materialogy- at the center of attention

1999 · V. B. Ufimtsev, T. A. Ukhorskaya · Metallurgist

Specific features of defect generation in Si + -implanted gallium arsenide under rapid photon annealing

1997 · В. Т. Бублик, S. B. Evgen’ev, et al. · Crystallography Reports

Effect of zinc on the solubility and distribution coefficients of bismuth in indium antimonide

1988 · V. B. Ufimtsev, I.A. Lapkina, et al. · Inorg. Mater. (Engl. Transl.); (United States)

Co-doping of indium antimonide with bismuth and zinc

1985 · S. B. Evgen’ev, Н. Н. Кононкова, et al. · Inorg. Mater. (Engl. Transl.); (United States)

Crystal-chemical aspects of the formation of MIS structures based on A III B V compounds

1980 · A. V. Emel’yanov, Г. М. Кузьмичева, et al. · Soviet physics. Doklady

ChemInform Abstract: VERHALTEN VON ZN IN INSB NACH DEN ERGEBNISSEN DER UNTERSUCHUNG DER THERMODYNAMISCHEN EIGENSCHAFTEN VON INSB‐ZN‐MISCHKRISTALLEN

1975 · V. B. UFIMTSEV, A. N. KRESTOVNIKOV, et al. · ChemInform

ChemInform Abstract: PHASENGLEICHGEWICHTE IM SYSTEM INAS‐ZNTE

1974 · V. P. SHUMILIN, G. N. UGLICHINA, et al. · ChemInform

ChemInform Abstract: GETRENNTE UND GEMEINSAME LOESLICHKEIT VON ZINK, CADMIUM UND TELLUR IN INDIUMPHOSPHID

1974 · V. M. GLAZOV, V. N. CHERNYAEV, et al. · ChemInform

ChemInform Abstract: ART DER CHEMISCHEN WECHSELWIRKUNG IN STARK DOTIERTEN A(III)B(V)‐KRISTALLEN

1974 · V. B. UFIMTSEV, F. A. GIMEL'FARB · ChemInform

ChemInform Abstract: BESONDERHEIT DES VERHALTENS DER BEIMENGUNGEN ZN UND TE BEI DER KRISTALLISATION DOTIERTER INAS‐GAAS‐LOESUNGEN

1972 · V. N. VIGDOROVICH, V. B. UFIMTSEV, et al. · ChemInform

ChemInform Abstract: VERTEILUNGSKOEFFIZIENTEN DER KOMPONENTEN UND ZUSTANDSDIAGRAMM DES SYST. INP‐GAP

1972 · V. P. SHUMILIN, V. B. UFIMTSEV, et al. · ChemInform

Works count: 20

Citation count: 47

H-index: 4

I10-index: 2