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M. Vinet

Observed names: M Vinet, M. VINET, M.Vinet, Maud Vinet, VINET M, VINET, Maud, Vinet, Vinet Maud, Vinet, M., Vinet, Maud
Observed institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, IBM (United States), The University of Melbourne, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Micro and Nanotechnology Innovation Centre, CEA Grenoble, University of Bristol, Institut de Recherche Interdisciplinaire de Grenoble, STMicroelectronics (France), Direction de la Recherche Technologique, Institut Nanosciences et Cryogénie, Institut de Microélectronique, Electromagnétisme et Photonique, Albany International (United States), Institut Néel, Laboratoire d'Électronique des Technologies de l'Information, Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes, IBM Research - Albany, Université Grenoble Alpes, Delft University of Technology
ORCID: 0000-0001-6757-295X
Observed ORCID: 0000-0001-6757-295X
OpenAlex ID: A5019983362
The future transistors
2023 · Wei Cao, Huiming Bu, et al. · Nature · 632
A CMOS silicon spin qubit
2016 · R. Maurand, X. Jehl, et al. · Nature Communications · 608
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22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications
2016 · R. Carter, J. Mazurier, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 301
Scaling silicon-based quantum computing using CMOS technology
2021 · M. F. Gonzalez-Zalba, S. de Franceschi, et al. · Nature Electronics · 272
Single-donor ionization energies in a nanoscale CMOS channel
2009 · M. Pierre, R. Wacquez, et al. · Nature Nanotechnology · 252
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Multi-$V_{T}$ UTBB FDSOI Device Architectures for Low-Power CMOS Circuit
2011 · Jean-Philippe Noel, Olivier Thomas, et al. · IEEE Transactions on Electron Devices · 200
Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening
2019 · H. Bohuslavskyi, A. G. M. Jansen, et al. · IEEE Electron Device Letters · 163
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Performance and design considerations for gate-all-around stacked-NanoWires FETs
2017 · S. Barraud, V. Lapras, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 162
Gate-based high fidelity spin readout in a CMOS device
2019 · Matias Urdampilleta, David J. Niegemann, et al. · Nature Nanotechnology · 160
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Advances, challenges and opportunities in 3D CMOS sequential integration
2011 · P. Batude, M. Vinet, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 151
3DVLSI with CoolCube process: An alternative path to scaling
2015 · P. Batude, C. Fenouillet-Beranger, et al. · Symposium on VLSI Technology · 146
Electrical Spin Driving by g -Matrix Modulation in Spin-Orbit Qubits
2018 · Alessandro Crippa, Romain Maurand, et al. · Physical Review Letters · 144
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Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
2019 · A. Crippa, R. Ezzouch, et al. · Nature Communications · 142
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Multiple gate devices: advantages and challenges
2005 · T. Poiroux, M. Vinet, et al. · Microelectronic Engineering · 131
Bonded planar double-metal-gate NMOS transistors down to 10 nm
2005 · M. Vinet, T. Poiroux, et al. · IEEE Electron Device Letters · 131
GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current
2010 · L. Hutin, C. Le Royer, et al. · IEEE Electron Device Letters · 121
Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain
2016 · S. Barraud, V. Lapras, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 118
Advances in 3D CMOS sequential integration
2009 · P. Batude, M. Vinet, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 118
Strong coupling between a photon and a hole spin in silicon
2023 · Cécile X. Yu, Simon Zihlmann, et al. · Nature Nanotechnology · 112
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Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot
2018 · Andrea Corna, Léo Bourdet, et al. · npj Quantum Information · 107
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A single hole spin with enhanced coherence in natural silicon
2022 · N. Piot, B. Brun, et al. · Nature Nanotechnology · 105
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Planar Fully depleted SOI technology: A powerful architecture for the 20nm node and beyond
2010 · O. Faynot, F. Andrieu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 104
Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor
2014 · Benoit Voisin, Viet-Hung Nguyen, et al. · Nano Letters · 98
High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
2013 · Q. Liu, M. Vinet, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 95
Simple and controlled single electron transistor based on doping modulation in silicon nanowires
2006 · M. Hofheinz, X. Jehl, et al. · Applied Physics Letters · 95
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Works count: 591
Citation count: 11,180
H-index: 54
I10-index: 209
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