Author

Sreenidhi Turuvekere

Observed names: Sreenidhi T, Turuvekere Sreenidhi

Observed institutions: Indian Institute of Technology Madras, Siddaganga Institute of Technology

ORCID: 0000-0002-1935-906X

Observed ORCID: 0000-0002-1935-906X

OpenAlex ID: A5020097586

Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

2013 · Sreenidhi Turuvekere, Naveen Karumuri, et al. · IEEE Transactions on Electron Devices · 318

Evidence of Fowler–Nordheim Tunneling in Gate Leakage Current of AlGaN/GaN HEMTs at Room Temperature

2014 · Sreenidhi Turuvekere, Dipendra Singh Rawal, et al. · IEEE Transactions on Electron Devices · 69

A Continuous Analytical Model for 2-DEG Charge Density in AlGaN/GaN HEMTs Valid for All Bias Voltages

2014 · Naveen Karumuri, Sreenidhi Turuvekere, et al. · IEEE Transactions on Electron Devices · 69

Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al2O3/AlInN/GaN MIS-HEMT

2014 · Gourab Dutta, Sreenidhi Turuvekere, et al. · IEEE Electron Device Letters · 58

Effect of Barrier Layer Thickness on Gate Leakage Current in AlGaN/GaN HEMTs

2015 · Sreenidhi Turuvekere, Amitava DasGupta, et al. · IEEE Transactions on Electron Devices · 36

Symmetric BSIM-SOI—Part I: A Compact Model for Dynamically Depleted SOI MOSFETs

2024 · Chetan Kumar Dabhi, Dinesh Rajasekharan, et al. · IEEE Transactions on Electron Devices · 22

Physical Insights and Accurate Modeling of Transconductance in Body-Contacted Dynamically Depleted SOI MOSFETs

2024 · Debashish Nandi, Chetan Kumar Dabhi, et al. · IEEE Transactions on Electron Devices · 10

Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs

2024 · Chetan Kumar Dabhi, Debashish Nandi, et al. · IEEE Transactions on Electron Devices · 8

Utilizing Symmetric BSIM-SOI SPICE Model for Dynamically Depleted RF SOI T/R Switches and Logic Circuits

2024 · Debashish Nandi, Chetan Kumar Dabhi, et al. · IEEE Journal of the Electron Devices Society · 6

Validation of Dynamically Depleted Symmetric BSIM-SOI Compact model for RF SOI T/R Switch Applications

2024 · Debashish Nandi, Chetan Kumar Dabhi, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 5

High Pressure Oxidation of 4H-SiC in Nitric Acid Vapor

2011 · K. Kalai Selvi, Turuvekere Sreenidhi, et al. · Japanese Journal of Applied Physics · 4

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Optimization of ohmic contact for the fabrication of InGaN/GaN multiple quantum well blue LED

2012 · Turuvekere Sreenidhi, Jyotirmoy Chatterjee, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1

Nonlinear Body Resistance in SOI MOSFETs Under Dynamic Depletion: Compact Modeling and DC Characterization

2026 · Debashish Nandi, Chetan Kumar Dabhi, et al. · IEEE Transactions on Electron Devices

Accurate Modeling of Sub-Threshold Region Considering the Impact of STI Edge Conduction in Surface Potential-Based BSIM-SOI Compact Model Framework

2025 · Debashish Nandi, Chetan Kumar Dabhi, et al. · International Compact Modeling Conference (ICMC)

Recent Enhancements in the Industry-Standard Surface Potential-Based BSIM-SOI Compact Model

2025 · Debashish Nandi, Chetan Kumar Dabhi, et al. · International Compact Modeling Conference (ICMC)

Extraction of Output Conductance Parameters From Simple DC IV Measurements for a Compact Model

2022 · Sreenidhi Turuvekere, Anamika Singh Pratiyush, et al. · IEEE International Conference on Emerging Electronics (ICEE)

Reduction in Gate Leakage Current of AlGaN/GaN HEMT by Rapid Thermal Oxidation

2014 · Sreenidhi T, A. Azizur Rahman, et al. · MRS Proceedings

Works count: 17

Citation count: 606

H-index: 8

I10-index: 7