Author

Takumu Saito

Observed name: T. Saito

Institution: Meijo University

Observed institutions: NEC (Japan), Meijo University

ORCID: 0009-0004-1660-2185

Observed ORCID: 0009-0004-1660-2185

OpenAlex ID: A5020130178

Long lifetime operation of an ArF-excimer laser

1996 · T. Saito, S. Ito, et al. · Applied Physics B · 10

Impact of growth temperature on heterostructure interface steepness in ultraviolet-B AlGaN-based laser diodes

2025 · Takumu Saito, Rintaro Miyake, et al. · Applied Physics Letters · 8

Room-temperature continuous-wave lasing at 318 nm on a relaxed AlGaN template grown on a sapphire substrate

2026 · Rintaro Miyake, Takumu Saito, et al. · Applied Physics Letters · 5

Over 50% carrier injection efficiency in AlGaN-based UV-B laser diodes enabled by combining Al-content-drop design and low-temperature epitaxy

2025 · Takumu Saito, Rintaro Miyake, et al. · Applied Physics Letters · 4

Enhancing the Carrier Injection Efficiency in AlGaN‐Based UV‐B Laser Diodes

2025 · Takumu Saito, Rintaro Miyake, et al. · physica status solidi (a) · 4

Systematic Comparison of Ohmic Contact Formation on Group-III- and N-Polar AlGaN from One Epitaxial Wafer

2026 · Ryota Watanabe, Takumu Saito, et al. · ECS Journal of Solid State Science and Technology

Interface-abruptness-limited physics in AlGaN UV-B laser diodes

2026 · Takumu Saito, Rintaro Miyake, et al. · Applied Physics Letters

Internal-loss-limited 5.5% wall-plug efficiency in index-guided AlGaN UV-B laser diodes with polarization-doped cladding layers

2026 · Rintaro Miyake, Takumu Saito, et al. · Applied Physics Letters

Epitaxial growth strategies and recent progress enabling room-temperature continuous-wave operation of AlGaN-based UV-B laser diodes

2026 · Motoaki Iwaya, Takumu Saito, et al.

Works count: 9

Citation count: 31

H-index: 4

I10-index: 1