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Daigo Shimada
Observed name:
D. Shimada
Institution:
Semiconductor Energy Laboratory (Japan)
Observed institution:
Semiconductor Energy Laboratory (Japan)
ORCID:
0000-0002-8566-3211
Observed ORCID:
0000-0002-8566-3211
OpenAlex ID:
A5020377640
A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications
2019
·
Hitoshi Kunitake
, Ryo Arasawa
, et al.
·
IEEE Journal of the Electron Devices Society
·
43
PDF
Crystalline IGZO ceramics (crystalline oxide semiconductor)–based devices for artificial intelligence
2019
·
Shunpei Yamazaki
, Satoru Ohshita
, et al.
·
International Journal of Ceramic Engineering & Science
·
33
PDF
P‐130: 3207‐ppi, 1.50‐in. OLED Microdisplay with All Pixels Formed Through RGB Side‐by‐Side Patterning by Photolithography
2023
·
Yasumasa Yamane
, Nozomu Sugisawa
, et al.
·
SID Symposium Digest of Technical Papers
·
14
C-axis aligned crystalline indium–gallium–zinc oxide ceramics and oxide semiconductor LSI as countermeasures against global warming
2022
·
Shunpei Yamazaki
, Kiyoshi Kato
, et al.
·
Ceramics International
·
8
32‐1: Oxide Semiconductor Field‐Effect Transistor for High‐Resolution Displays Capable of Deep Black Display
2022
·
Yutaka Okazaki
, Hiromi Sawai
, et al.
·
SID Symposium Digest of Technical Papers
·
7
Analysis and Experimental Proof of Deterioration-free Memory Device Using CAAC-IGZO FET
2015
·
M. Tsubuku
, T. Takeuchi
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
2
Reliability of Improved CAAC-IGZO FET Satisfying NOSRAM Performance
2015
·
T. Murakawa
, K. Ohshima
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
1
11‐3: Development of a New Robust Intermediate Connector Using Indium for Realizing Tandem OLED Display Exceeding 5,000 ppi by Photolithography
2026
·
Nobuharu Ohsawa
, Shinya Fukuzaki
, et al.
·
SID Symposium Digest of Technical Papers
PDF
OLED Display with All Pixels Formed through RGB Side-by-side Patterning by Photolithography
2023
·
Yasumasa Yamane
, Nozomu Sugisawa
, et al.
·
Proceedings of the International Display Workshops
Characteristics of Scaled CAAC-IGZO FET and Its Application to LSI
2019
·
K. Kato
, H. Kunitake
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Reliability of 60-nm scale CAAC-IGZO FET
2018
·
H. Kimura
, D. Shimada
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
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Works count:
11
Citation count:
108
H-index:
5
I10-index:
3
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